首页>GTRA214602FC-V1-R0>规格书详情
GTRA214602FC-V1-R0中文资料PDF规格书
GTRA214602FC-V1-R0规格书详情
Description
The GTRA214602FC is a 490-watt (P3dB) GaN on SiC high
electron mobility transistor (HEMT) designed for use in
multi-standard cellular power amplifier applications. It
features input matching, high efficiency, and a thermallyenhanced package with earless flange.
Features
• GaN on SiC HEMT technology
• Input matched
• Asymmetric Doherty design
- Main: P3dB = 170 W Typ
- Peak: P3dB = 350 W Typ
• Typical pulsed CW performance: 16 µs pulse width,
10 duty cycle, 2140 MHz, 48 V, Doherty fixture
- Gain = 15 dB @ 49 dBm
- Efficiency = 60 @ 49 dBm
- Output power at P3dB = 490 W
• Human Body Model Class 1B (per ANSI/ESDA/
JEDEC JS-001)
• Low thermal resistance
• Pb-free and RoHS compliant
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
21+ |
SMD |
9800 |
只做原装正品假一赔十!正规渠道订货! |
询价 | ||
WOLFSPEED |
22+ |
N/A |
34388 |
原装原装原装 |
询价 | ||
WOLFSPEED |
22+ |
SMD |
518000 |
明嘉莱只做原装正品现货 |
询价 | ||
INFINEON/英飞凌 |
21+ROHS |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
INFINEON/英飞凌 |
SMD |
265209 |
假一罚十原包原标签常备现货! |
询价 | |||
INFINEON/英飞凌 |
2023+ |
SMD |
8635 |
一级代理优势现货,全新正品直营店 |
询价 | ||
23+ |
22757 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
询价 | ||||
INFINEON |
23+ |
8000 |
只做原装现货 |
询价 | |||
MACOM Technology Solutions |
24+ |
- |
9350 |
独立分销商,公司只做原装,诚心经营,免费试样正品保证 |
询价 | ||
INFINEON/英飞凌 |
2022 |
SMD |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 |