Thermally-Enhanced High Power RF GaN on SiC HEMT 50 W, 48 V, 3400 – 3800 MHz

Description The GTRA360502M houses two GaN-on-SiC power transistor for use in asymmetric Doherty power amplifi ers. The device has been designed for use in communications infrastructure applications from 3,400 MHz to 3,800 MHz. It operates from a supply voltage of up to 50 volts and delivers

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Thermally-Enhanced High Power RF GaN on SiC HEMT 200 W, 48 V, 3400 – 3600 MHz

Description The GTRA362002FC is a 200-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features • GaN on

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Thermally-Enhanced High Power RF GaN on SiC HEMT 200 W, 48 V, 3400 – 3600 MHz

Description The GTRA362002FC is a 200-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features • GaN on

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Thermally-Enhanced High Power RF GaN on SiC HEMT 200 W, 48 V, 3400 – 3600 MHz

Description The GTRA362002FC is a 200-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features • GaN on

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Thermally-Enhanced High Power RF GaN on SiC HEMT 200 W, 48 V, 3400 – 3600 MHz

Description The GTRA362002FC is a 200-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features • GaN on

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Thermally-Enhanced High Power RF GaN on SiC HEMT 280 W, 48 V, 3400 – 3600 MHz

Description The GTRA362802FC is a 280-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features • GaN on

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Thermally-Enhanced High Power RF GaN on SiC HEMT 280 W, 48 V, 3400 – 3600 MHz

Description The GTRA362802FC is a 280-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features • GaN on

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Thermally-Enhanced High Power RF GaN on SiC HEMT 280 W, 48 V, 3400 – 3600 MHz

Description The GTRA362802FC is a 280-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features • GaN on

文件：553.14 Kbytes 页数：8 Pages

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Thermally-Enhanced High Power RF GaN on SiC HEMT 280 W, 48 V, 3400 – 3600 MHz

Description The GTRA362802FC is a 280-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features • GaN on

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Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 – 3600 MHz

Description The GTRA364002FC is a 400-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficency, and a thermally-enhanced package with earless flange. Features • GaN on

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