GTRA362002FC-V1-R0中文资料WOLFSPEED数据手册PDF规格书

厂商型号	GTRA362002FC-V1-R0
功能描述	Thermally-Enhanced High Power RF GaN on SiC HEMT 200 W, 48 V, 3400 – 3600 MHz
文件大小	435.98 Kbytes
页面数量	8 页
生产厂商	WOLFSPEED, INC.
企业简称	WOLFSPEED
中文名称	WOLFSPEED, INC.官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-5-16 23:00:00
人工找货	GTRA362002FC-V1-R0价格和库存，欢迎联系客服免费人工找货

Description

The GTRA362002FC is a 200-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power

amplifier applications. It features input matching, high efficiency, and a

thermally-enhanced package with earless flange.

Features

• GaN on SiC HEMT technology

• Input matched

• Asymmetrical Doherty design

- Main: P3dB = 85 W Typ

- Peak: P3dB = 115 W Typ

• Typical Pulsed CW performance, 3500 MHz, 48 V,

combined outputs

- Output power at P3dB = 200 W

- Efficiency = 60

- Gain = 12.5 dB

• Capable of handling 10:1 VSWR @50 V, 30 W (WCDMA)

output power

• Human Body Model Class 1A, (per ANSI/ESDA/JEDEC

JS-001)

• Low thermal resistance

• Pb-free and RoHS compliant