Description

The GTRA262802FC is a 250-watt (P3dB) GaN on SiC high electron

mobility transistor (HEMT) for use in multi-standard cellular power

amplifier applications. It features input matching, high efficiency,

and a thermally-enhanced package with earless flange.

Features

• GaN on SiC HEMT technology

• Input matched

• Typical pulsed CW performance, 2605 MHz, 48 V,

combined outputs, 16 µs pulse width, 10 duty

cycle

- Output power at P3dB = 250 W

- Efficiency = 62

- Gain = 14.4 dB

• Capable of handling 10:1 VSWR @48 V, 38 W (CW)

output power

• Human Body Model Class 1A (per ANSI/ESDA/

JEDEC JS-001)

• Low thermal resistance

• Pb-free and RoHS compliant

GTRA262802FC属于分立半导体产品 > 晶体管 - FET，MOSFET - 射频。WOLFSPEED, INC.制造生产的GTRA262802FC晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。