Description

The GTRA263902FC is a 370-watt (P3dB) GaN on SiC high

electron mobility transistor (HEMT) for use in multistandard cellular power amplifier applications. It features

input matching, high efficiency, and a thermally-enhanced

package with earless flange.

Features

• GaN on SiC HEMT technology

• Input matched

• Typical Pulsed CW performance, 2690 MHz, 48 V,

combined outputs

- Output power at P3dB = 370 W

- Efficiency = 70

- Gain = 15 dB

• Capable of handling 10:1 VSWR @48 V, 56 W (CW)

output power

• Human Body Model class 1A (per ANSI/ESDA/

JEDEC JS-001)

• Low thermal resistance

• Pb-free and RoHS compliant

GTRA263902FC-V2-R0属于分立半导体产品 > 晶体管 - FET，MOSFET - 射频。WOLFSPEED, INC.制造生产的GTRA263902FC-V2-R0晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。