Thermally-Enhanced High Power RF GaN on SiC HEMT 50 W, 48 V, 3400 – 3800 MHz

Description The GTRA360502M houses two GaN-on-SiC power transistor for use in asymmetric Doherty power amplifi ers. The device has been designed for use in communications infrastructure applications from 3,400 MHz to 3,800 MHz. It operates from a supply voltage of up to 50 volts and delivers

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