Thermally-Enhanced High Power RF GaN on SiC HEMT 280 W, 48 V, 3400 – 3600 MHz

Description The GTRA362802FC is a 280-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features • GaN on

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High Power RF GaN-on-SiC HEMT 280 W, 48 V, 3400 - 3600 MHz

The GTRA362802FC is a 280-watt (P3dB) GaN-on-SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. ·Asymmetrical Doherty design: Main P3dB 120 W Typ, Peak P3dB 180 W Typ\n·Typical Pulsed CW performance; 3400-3600 MHz, 48 V, combined outputs\n·Output power at P3dB 280 W\n·Efficiency 60%\n·Gain 15 dB\n·Capable of handling 10:1 VSWR @48 V, 44 W (WCDMA) output power\n·Low thermal resistance\n·Pb-;

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Thermally-Enhanced High Power RF GaN on SiC HEMT 280 W, 48 V, 3400 – 3600 MHz

Description The GTRA362802FC is a 280-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features • GaN on

文件：553.14 Kbytes 页数：8 Pages

WOLFSPEED

Thermally-Enhanced High Power RF GaN on SiC HEMT 280 W, 48 V, 3400 – 3600 MHz

Description The GTRA362802FC is a 280-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features • GaN on

文件：553.14 Kbytes 页数：8 Pages

WOLFSPEED