GTRA374902FC-V1-R0中文资料WOLFSPEED数据手册PDF规格书

厂商型号	GTRA374902FC-V1-R0
功能描述	Thermally-Enhanced High Power RF GaN on SiC HEMT 450 W, 48 V, 3600 – 3700 MHz
文件大小	459.78 Kbytes
页面数量	8 页
生产厂商	WOLFSPEED
网址	网址
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-10-4 15:01:00
人工找货	GTRA374902FC-V1-R0价格和库存，欢迎联系客服免费人工找货

描述 Description

The GTRA374902FC is a 450-watt (P3dB) GaN on SiC high electron

mobility transistor (HEMT) for use in multi-standard cellular power

amplifier applications. It features input matching, high efficiency,

and a thermally-enhanced package with earless flange.

特性 Features

• GaN on SiC HEMT technology

• Input matched

• Asymmetrical Doherty design

- Main: P3dB = 220 W Typ

- Peak: P3dB = 300 W Typ

• Typical Pulsed CW performance, 3700 MHz, 48 V,

Doherty @ P3dB, 10 µs, 10 duty cycle

- Output power = 450 W

- Drain efficiency = 60

- Gain = 11.5 dB

• Capable of handling 10:1 VSWR @ 48 V, 63 W

(WCDMA) output power

• Human Body Model Class 1A, (per ANSI/ESDA/

JEDEC JS-001)

• Low thermal resistance

• Pb-free and RoHS compliant