NPN Silicon Planar Epitaxial Transistor

NPN Silicon PlanarEpitaxial Transistor P/b Lead(Pb)-Free

文件：108.3 Kbytes 页数：4 Pages

WEITRON

丝印：GT240P10；Package：TO-263；P-Channel Enhancement Mode Power MOSFET

Description The GT240P10M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：975.39 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

PNEUMATIC TURBINE VIBRATIORS

[VIBTEC]

文件：168.62 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

丝印：GT250P10；Package：TO-263；P-Channel Enhancement Mode Power MOSFET

Description The GT250P10M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：906.88 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT250P10；Package：TO-220；P-Channel Enhancement Mode Power MOSFET

Description The GT250P10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：938.63 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The GT2530 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-26 package is universally used for all commercial-industrial surface mount applications. Features * Low Gate Change * Low On-

文件：390.67 Kbytes 页数：7 Pages

GTM

勤益投资控股

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The GT2531 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-26 package is universally used for all commercial-industrial surface mount applications Features * Low Gate Change * Low On-r

文件：389.74 Kbytes 页数：7 Pages

GTM

勤益投资控股

N CHANNEL IGBT (STROBE FLASH APPLICATIONS)

Discrete IGBTs (PDF:875KB) 03/2011 : http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 * GT30G124 - Breakdown Voltage VCES(V) @Ta = 25C : 430V - IGBT Current Rating IC(A) @Ta = 25C : 200A * GT30J124 - Breakdown Voltage VCES(V) @Ta = 25C : 600V - IGBT Current Rating IC(

文件：194.7 Kbytes 页数：4 Pages

TOSHIBA

东芝

N CHANNEL IGBT (STROBE FLASH APPLICATIONS)

STROBE FLASH APPLICATIONS ● High Input Impedance ● Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 170A) ● Enhancement−Mode ● 12V Gate Drive

文件：182.61 Kbytes 页数：3 Pages

TOSHIBA

东芝

N CHANNEL IGBT (STROBE FLASH APPLICATIONS)

Discrete IGBTs (PDF:875KB) 03/2011 : http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 * GT30G124 - Breakdown Voltage VCES(V) @Ta = 25C : 430V - IGBT Current Rating IC(A) @Ta = 25C : 200A * GT30J124 - Breakdown Voltage VCES(V) @Ta = 25C : 600V - IGBT Current Rating IC(

文件：183.5 Kbytes 页数：3 Pages

TOSHIBA

东芝