N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The GT2531 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-26 package is universally used for all commercial-industrial surface mount applications Features * Low Gate Change * Low On-r

文件：389.74 Kbytes 页数：7 Pages

GTM

勤益投资控股

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：394.91 Kbytes 页数：7 Pages

ETL

亚历电子

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description\nThe GT2531 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.\nThe SOT-26 package is universally used for all commercial-industrial surface mount applications * Low Gate Change\n* Low On-resistance\n* RoHS Compliant;

GTM

勤益投资控股

Silicon Complementary Transistors High Voltage Driver

Features: • High Current Capacity: IC = 2A • High Breakdown Voltage: VCEO = 400V Min

文件：23.24 Kbytes 页数：2 Pages

NTE

VERSATILE SINGLE CHIP TELEPHONE WITH 14 NUMBER REPERTORY DIALLER

GENERAL DESCRIPTION The SA2531 is a CMOS integrated circuit that contains all the functions needed to form a high performance electronic telephone. The device incorporates LD/MF repertory dialling, melody generation, ring frequency discrimination and a high quality speech circuit. A RAM i

文件：392.11 Kbytes 页数：24 Pages

SAMES

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planer transistor For high frequency, oscillation and mixing ■ Features ● Two elements incorporated into one package. (Base-coupled transistors) ● Reduction of the mounting area and assembly cost by one half.

文件：32.53 Kbytes 页数：2 Pages

PANASONIC

松下