丝印：GT2K6P15；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The GT2K6P15K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：775.53 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT2K6P15；Package：SOP-8；P-Channel Enhancement Mode Power MOSFET

Description The GT2K6P15S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：806.82 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

PNEUMATIC TURBINE VIBRATIORS

[VIBTEC]

文件：168.62 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

N CHANNEL TYPE (HIGH POWER AMPLIFIER APPLICATION)

Discrete IGBTs (PDF:875KB) 03/2011 : http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 * GT30G124 - Breakdown Voltage VCES(V) @Ta = 25C : 430V - IGBT Current Rating IC(A) @Ta = 25C : 200A * GT30J124 - Breakdown Voltage VCES(V) @Ta = 25C : 600V - IGBT Current Rating IC(

文件：168.51 Kbytes 页数：3 Pages

TOSHIBA

东芝

P CHANNEL TYPE (HIGH POWER AMPLIFIER APPLICATIONS)

Discrete IGBTs (PDF:875KB) 03/2011 : http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 * GT30G124 - Breakdown Voltage VCES(V) @Ta = 25C : 430V - IGBT Current Rating IC(A) @Ta = 25C : 200A * GT30J124 - Breakdown Voltage VCES(V) @Ta = 25C : 600V - IGBT Current Rating IC(

文件：169.07 Kbytes 页数：3 Pages

TOSHIBA

东芝

N CHANNEL IGBT (STROBE FLASH APPLICATIONS)

STROBE FLASH APPLICATIONS ● High Input Impedance ● Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 130A) ● Enhancement−Mode ● 20V Gate Drive

文件：179.99 Kbytes 页数：3 Pages

TOSHIBA

东芝

N CHANNEL IGBT (STROBE FLASH APPLICATIONS)

STROBE FLASH APPLICATIONS ● High Input Impedance ● Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 130A) ● Enhancement−Mode ● 20V Gate Drive

文件：177.99 Kbytes 页数：3 Pages

TOSHIBA

东芝

N CHANNEL IGBT (STROBE FLASH APPLICATIONS)

STROBE FLASH APPLICATIONS ● High Input Impedance ● Low Saturation Voltage : VCE(sat) = 8.0V (Max.) (IC = 130A) ● Enhancement−Mode ● 12V Gate Drive

文件：183.83 Kbytes 页数：3 Pages

TOSHIBA

东芝

N CHANNEL IGBT (STROBE FLASH APPLICATIONS)

STROBE FLASH APPLICATIONS ● High Input Impedance ● Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 130A) ● Enhancement−Mode ● 12V Gate Drive

文件：179.81 Kbytes 页数：3 Pages

TOSHIBA

东芝

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

High Power Switching Applications • Third-generation IGBT • Enhancement mode type • High speed: tf = 0.30 μs (max) • Low saturation voltage: VCE (sat) = 2.7 V (max)

文件：259.67 Kbytes 页数：6 Pages

TOSHIBA

东芝