GT2

Premium Matte Cloth (Gaffers) Tape GT

GT2

功率继电器;

GT20

PNEUMATIC TURBINE VIBRATIORS

[VIBTEC]

GT20D101

N CHANNEL TYPE (HIGH POWER AMPLIFIER APPLICATION)

DiscreteIGBTs(PDF:875KB)03/2011: http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 *GT30G124 -BreakdownVoltageVCES(V)@Ta=25C:430V -IGBTCurrentRatingIC(A)@Ta=25C:200A *GT30J124 -BreakdownVoltageVCES(V)@Ta=25C:600V -IGBTCurrentRatingIC(

GT20D201

P CHANNEL TYPE (HIGH POWER AMPLIFIER APPLICATIONS)

DiscreteIGBTs(PDF:875KB)03/2011: http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 *GT30G124 -BreakdownVoltageVCES(V)@Ta=25C:430V -IGBTCurrentRatingIC(A)@Ta=25C:200A *GT30J124 -BreakdownVoltageVCES(V)@Ta=25C:600V -IGBTCurrentRatingIC(

GT20G101

N CHANNEL IGBT (STROBE FLASH APPLICATIONS)

STROBEFLASHAPPLICATIONS ●HighInputImpedance ●LowSaturationVoltage:VCE(sat)=8V(Max.)(IC=130A) ●Enhancement−Mode ●20VGateDrive

GT20G101SM

N CHANNEL IGBT (STROBE FLASH APPLICATIONS)

STROBEFLASHAPPLICATIONS ●HighInputImpedance ●LowSaturationVoltage:VCE(sat)=8V(Max.)(IC=130A) ●Enhancement−Mode ●20VGateDrive

GT20G102

N CHANNEL IGBT (STROBE FLASH APPLICATIONS)

STROBEFLASHAPPLICATIONS ●HighInputImpedance ●LowSaturationVoltage:VCE(sat)=8.0V(Max.)(IC=130A) ●Enhancement−Mode ●12VGateDrive

GT20G102SM

N CHANNEL IGBT (STROBE FLASH APPLICATIONS)

STROBEFLASHAPPLICATIONS ●HighInputImpedance ●LowSaturationVoltage:VCE(sat)=8V(Max.)(IC=130A) ●Enhancement−Mode ●12VGateDrive

GT20J101

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

HighPowerSwitchingApplications •Third-generationIGBT •Enhancementmodetype •Highspeed:tf=0.30μs(max) •Lowsaturationvoltage:VCE(sat)=2.7V(max)