| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
GT2 | Premium Matte Cloth (Gaffers) Tape GT 文件:245.13 Kbytes 页数:2 Pages | 3M | 3M | |
PNEUMATIC TURBINE VIBRATIORS [VIBTEC] 文件:168.62 Kbytes 页数:2 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
N CHANNEL TYPE (HIGH POWER AMPLIFIER APPLICATION) Discrete IGBTs (PDF:875KB) 03/2011 : http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 * GT30G124 - Breakdown Voltage VCES(V) @Ta = 25C : 430V - IGBT Current Rating IC(A) @Ta = 25C : 200A * GT30J124 - Breakdown Voltage VCES(V) @Ta = 25C : 600V - IGBT Current Rating IC( 文件:168.51 Kbytes 页数:3 Pages | TOSHIBA 东芝 | TOSHIBA | ||
P CHANNEL TYPE (HIGH POWER AMPLIFIER APPLICATIONS) Discrete IGBTs (PDF:875KB) 03/2011 : http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 * GT30G124 - Breakdown Voltage VCES(V) @Ta = 25C : 430V - IGBT Current Rating IC(A) @Ta = 25C : 200A * GT30J124 - Breakdown Voltage VCES(V) @Ta = 25C : 600V - IGBT Current Rating IC( 文件:169.07 Kbytes 页数:3 Pages | TOSHIBA 东芝 | TOSHIBA | ||
N CHANNEL IGBT (STROBE FLASH APPLICATIONS) STROBE FLASH APPLICATIONS ● High Input Impedance ● Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 130A) ● Enhancement−Mode ● 20V Gate Drive 文件:179.99 Kbytes 页数:3 Pages | TOSHIBA 东芝 | TOSHIBA | ||
N CHANNEL IGBT (STROBE FLASH APPLICATIONS) STROBE FLASH APPLICATIONS ● High Input Impedance ● Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 130A) ● Enhancement−Mode ● 20V Gate Drive 文件:177.99 Kbytes 页数:3 Pages | TOSHIBA 东芝 | TOSHIBA | ||
N CHANNEL IGBT (STROBE FLASH APPLICATIONS) STROBE FLASH APPLICATIONS ● High Input Impedance ● Low Saturation Voltage : VCE(sat) = 8.0V (Max.) (IC = 130A) ● Enhancement−Mode ● 12V Gate Drive 文件:183.83 Kbytes 页数:3 Pages | TOSHIBA 东芝 | TOSHIBA | ||
N CHANNEL IGBT (STROBE FLASH APPLICATIONS) STROBE FLASH APPLICATIONS ● High Input Impedance ● Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 130A) ● Enhancement−Mode ● 12V Gate Drive 文件:179.81 Kbytes 页数:3 Pages | TOSHIBA 东芝 | TOSHIBA | ||
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications • Third-generation IGBT • Enhancement mode type • High speed: tf = 0.30 μs (max) • Low saturation voltage: VCE (sat) = 2.7 V (max) 文件:259.67 Kbytes 页数:6 Pages | TOSHIBA 东芝 | TOSHIBA | ||
Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf 文件:1.58274 Mbytes 页数:73 Pages | TOSHIBA 东芝 | TOSHIBA |
技术参数
- 触点类型:
1A
- 线圈电压:
3~24V
- 线圈功率:
0.78W
- 外形尺寸:
30.1×15.7×23.3mm
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOSHIBA |
05+ |
TO-3PL |
10000 |
全新原装 绝对有货 |
询价 | ||
GIANTEC |
15+ |
SOP8 |
1000 |
进口原装现货假一赔万力挺实单 |
询价 | ||
GIANTEC |
25+ |
SOP8 |
30000 |
房间原装现货特价热卖,有单详谈 |
询价 | ||
GT |
2022+ |
19990 |
全新原装 货期两周 |
询价 | |||
Intel |
1931+ |
N/A |
493 |
加我qq或微信,了解更多详细信息,体验一站式购物 |
询价 | ||
GIANTEC |
23+ |
6800 |
正规渠道,只有原装! |
询价 | |||
GENITOP |
SOP8 |
1200 |
正品原装--自家现货-实单可谈 |
询价 | |||
N/A |
2023+环保现货 |
绝对原装正品!! |
4425 |
专注军工、汽车、医疗、工业等方案配套一站式服务 |
询价 | ||
广濑 |
25+ |
DIP |
100000 |
全新、原装 |
询价 | ||
N/A |
23+ |
TSOP-48 |
50000 |
全新原装正品现货,支持订货 |
询价 |
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