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GT2

Premium Matte Cloth (Gaffers) Tape GT

文件:245.13 Kbytes 页数:2 Pages

3M

GT20

PNEUMATIC TURBINE VIBRATIORS

[VIBTEC]

文件:168.62 Kbytes 页数:2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

GT20D101

N CHANNEL TYPE (HIGH POWER AMPLIFIER APPLICATION)

Discrete IGBTs (PDF:875KB) 03/2011 : http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 * GT30G124 - Breakdown Voltage VCES(V) @Ta = 25C : 430V - IGBT Current Rating IC(A) @Ta = 25C : 200A * GT30J124 - Breakdown Voltage VCES(V) @Ta = 25C : 600V - IGBT Current Rating IC(

文件:168.51 Kbytes 页数:3 Pages

TOSHIBA

东芝

GT20D201

P CHANNEL TYPE (HIGH POWER AMPLIFIER APPLICATIONS)

Discrete IGBTs (PDF:875KB) 03/2011 : http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 * GT30G124 - Breakdown Voltage VCES(V) @Ta = 25C : 430V - IGBT Current Rating IC(A) @Ta = 25C : 200A * GT30J124 - Breakdown Voltage VCES(V) @Ta = 25C : 600V - IGBT Current Rating IC(

文件:169.07 Kbytes 页数:3 Pages

TOSHIBA

东芝

GT20G101

N CHANNEL IGBT (STROBE FLASH APPLICATIONS)

STROBE FLASH APPLICATIONS ● High Input Impedance ● Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 130A) ● Enhancement−Mode ● 20V Gate Drive

文件:179.99 Kbytes 页数:3 Pages

TOSHIBA

东芝

GT20G101SM

N CHANNEL IGBT (STROBE FLASH APPLICATIONS)

STROBE FLASH APPLICATIONS ● High Input Impedance ● Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 130A) ● Enhancement−Mode ● 20V Gate Drive

文件:177.99 Kbytes 页数:3 Pages

TOSHIBA

东芝

GT20G102

N CHANNEL IGBT (STROBE FLASH APPLICATIONS)

STROBE FLASH APPLICATIONS ● High Input Impedance ● Low Saturation Voltage : VCE(sat) = 8.0V (Max.) (IC = 130A) ● Enhancement−Mode ● 12V Gate Drive

文件:183.83 Kbytes 页数:3 Pages

TOSHIBA

东芝

GT20G102SM

N CHANNEL IGBT (STROBE FLASH APPLICATIONS)

STROBE FLASH APPLICATIONS ● High Input Impedance ● Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 130A) ● Enhancement−Mode ● 12V Gate Drive

文件:179.81 Kbytes 页数:3 Pages

TOSHIBA

东芝

GT20J101

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

High Power Switching Applications • Third-generation IGBT • Enhancement mode type • High speed: tf = 0.30 μs (max) • Low saturation voltage: VCE (sat) = 2.7 V (max)

文件:259.67 Kbytes 页数:6 Pages

TOSHIBA

东芝

GT20J101

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件:1.58274 Mbytes 页数:73 Pages

TOSHIBA

东芝

技术参数

  • 触点类型:

    1A

  • 线圈电压:

    3~24V

  • 线圈功率:

    0.78W

  • 外形尺寸:

    30.1×15.7×23.3mm

供应商型号品牌批号封装库存备注价格
TOSHIBA
05+
TO-3PL
10000
全新原装 绝对有货
询价
GIANTEC
15+
SOP8
1000
进口原装现货假一赔万力挺实单
询价
GIANTEC
25+
SOP8
30000
房间原装现货特价热卖,有单详谈
询价
GT
2022+
19990
全新原装 货期两周
询价
Intel
1931+
N/A
493
加我qq或微信,了解更多详细信息,体验一站式购物
询价
GIANTEC
23+
6800
正规渠道,只有原装!
询价
GENITOP
SOP8
1200
正品原装--自家现货-实单可谈
询价
N/A
2023+环保现货
绝对原装正品!!
4425
专注军工、汽车、医疗、工业等方案配套一站式服务
询价
广濑
25+
DIP
100000
全新、原装
询价
N/A
23+
TSOP-48
50000
全新原装正品现货,支持订货
询价
更多GT2供应商 更新时间2026-1-27 17:23:00