ICS-630

HIGHDIRECTIVITYCOLUMNSPEAKER

4인치전대역스피커유닛채택 매칭트랜스채용 옥외용,방수처리 BRACKET을이용한지향각조절용이

IIRF630N

N-ChannelMOSFETTransistor

INA630

INA630Precision,126dBCMRR,IndirectCurrentFeedbackInstrumentationAmplifier

1Features •Optimizedforcostandsizesensitiveapplications •Super-betabipolarprecision: –Highcommon-moderejection:126dB (minimum)forG=20V/Vto1000V/V –Lowoffsetvoltage:50μV(typical),350μV (maximum) –Lowoffsetvoltagedrift:0.5μV/ºC(typical), 2μV/°C(maximum) –L

IPC-630

NewGeneration4U15-SlotRackmountChassis

IRC630

PowerMOSFET(Vdss=200V,Rds(on)=0.40ohm,Id=9.0A)

IRC630PBF

HEXFETPOWERMOSFET

HEXFET®PowerMOSFET

IRF630

N-channelTrenchMOStransistor

GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistorusingTrenchtechnology,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications.

IRF630

N-CHANNEL200V-0.35ihm-9A-TO-220/FPMESHOVERLAY]MOSFET

Description ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY™process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. Generalfeatures ■Extremelyhighdv/dtcapability ■Verylowintrinsic

IRF630

9A,200V,0.400Ohm,N-ChannelPowerMOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas

IRF630

N-ChannelPowerMOSFETs,12A,150-200V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VQSRatedat±20V