N-Channel MOSFET Transistor

文件：339.05 Kbytes 页数：2 Pages

ISC

无锡固电

INA630 Precision, 126dB CMRR, Indirect Current Feedback Instrumentation Amplifier

1 Features • Optimized for cost and size sensitive applications • Super-beta bipolar precision: – High common-mode rejection: 126dB (minimum) for G = 20V/V to 1000V/V – Low offset voltage: 50μV (typical), 350μV (maximum) – Low offset voltage drift: 0.5μV/ºC (typical), 2μV/°C (maximum) – L

文件：2.33492 Mbytes 页数：32 Pages

TI

德州仪器

INA630 Precision, 126dB CMRR, Indirect Current Feedback Instrumentation Amplifier

1 Features • Optimized for cost and size sensitive applications • Super-beta bipolar precision: – High common-mode rejection: 126dB (minimum) for G = 20V/V to 1000V/V – Low offset voltage: 60μV (typical), 350μV (maximum) – Low offset voltage drift: 0.7μV/°C (typical), 2μV/°C (maximum) – L

文件：2.28574 Mbytes 页数：32 Pages

TI

德州仪器

INA630 Precision, 126dB CMRR, Indirect Current Feedback Instrumentation Amplifier

1 Features • Optimized for cost and size sensitive applications • Super-beta bipolar precision: – High common-mode rejection: 126dB (minimum) for G = 20V/V to 1000V/V – Low offset voltage: 60μV (typical), 350μV (maximum) – Low offset voltage drift: 0.7μV/°C (typical), 2μV/°C (maximum) – L

文件：2.28574 Mbytes 页数：32 Pages

TI

德州仪器