| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
JJW | ||||
50Amps,30VoltsN-CHANNELMOSFET | KIAGuangdong Keyia Semiconductor Technology Co., Ltd 可易亚半导体广东可易亚半导体科技有限公司 | KIA | ||
N-ChannelPowerMOSFET | MCCMicro Commercial Components 美微科美微科半导体公司 | MCC | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-ChannelLogicLevelEnhancementModePowerMOSFET | BWTECHBruckewell Technology LTD 布吕克韦尔技术布吕克韦尔技术有限公司 | BWTECH | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=50A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=25mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFET | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
PowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
PowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel30V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-ChannelLogicLevelEnhancementModeFieldEffectTransistor [Niko-Sem] | etc2List of Unclassifed Manufacturers etc2未分类制造商 | etc2 | ||
N-Channel30V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-channelTrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES •’Trench’technology •Verylowon-stateresistance •Fastswitching •Highthermalcyclingperformance •Lowthermalresistance •Logiclevel | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
TrenchMOStransistorStandardlevelFET GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemountingusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintended | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
N-channelTrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES •’Trench’technology •Verylowon-stateresistance •Fastswitching •Highthermalcyclingperformance •Lowthermalresistance •Logiclevel | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
TrenchMOStransistorStandardlevelFET GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemountingusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintended | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
N-channelTrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES •’Trench’technology •Verylowon-stateresistance •Fastswitching •Highthermalcyclingperformance •Lowthermalresistance •Logiclevel | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
GOFORD(谷峰) |
2112+ |
TO-252 |
105000 |
2500个/圆盘一级代理专营品牌!原装正品,优势现货, |
询价 | ||
GOFORD谷峰 |
23+ |
TO-252 |
22820 |
原装正品，支持实单 |
询价 | ||
GOFORD |
21+ |
N/A |
2500 |
进口原装,优势现货 |
询价 | ||
GOFORD |
23+ |
NA |
10 |
现货!就到京北通宇商城 |
询价 | ||
JCW |
21+ROHS |
TO-252 |
999999 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
GOFORD |
TO-220 |
22+ |
6000 |
十年配单,只做原装 |
询价 | ||
GOFORD |
2022+ |
TO-220 |
79999 |
询价 | |||
GOFORD |
2022+ |
TO-220 |
30000 |
进口原装现货供应,原装 假一罚十 |
询价 | ||
GOFORD |
20+ |
TO-220 |
32500 |
现货很近!原厂很远!只做原装 |
询价 | ||
FAIRCHILD/仙童 |
23+ |
TO-3PL |
10000 |
公司只做原装正品 |
询价 |
相关规格书
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- GAL16LV8C-10LJ
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相关库存
更多- G65SC151PEI-1
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