| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
PHB50N03T | TrenchMOS transistor Standard level FET GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemountingusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintended | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | |
PHB50N03T | isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=50A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=21mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=48A@TC=25℃ ·DrainSourceVoltage-VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=18mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channelTrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES •’Trench’technology •Verylowon-stateresistance •Fastswitching •Highthermalcyclingperformance •Lowthermalresistance •Logiclevel | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
N-Channel30-V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=48A@TC=25℃ ·DrainSourceVoltage-VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=16mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-Channel30V(D-S)MOSFET FEATURES •TrenchFET®powerMOSFET •Packagewithlowthermalresistance •100RgandUIStested | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-channelTrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES •’Trench’technology •Verylowon-stateresistance •Fastswitching •Highthermalcyclingperformance •Lowthermalresistance •Logiclevel | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
TrenchMOStransistorStandardlevelFET GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.ItisintendedforuseinDC-DCconvertersa | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
N-Channel30V(D-S)MOSFET FEATURES •TrenchFET®powerMOSFET •Packagewithlowthermalresistance •100RgandUIStested | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PHILIPS/飞利浦 |
24+ |
TO-263 |
20000 |
只做原厂渠道 可追溯货源 |
询价 | ||
24+ |
3000 |
公司存货 |
询价 | ||||
NXP |
23+ |
TO-263 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
NXP/恩智浦 |
23+ |
TO-126 |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
PHILIPS |
08+ |
TO-263 |
20000 |
普通 |
询价 | ||
NXP/恩智浦 |
2022+ |
SOT404(D2PAK) |
12888 |
原厂代理 终端免费提供样品 |
询价 | ||
PHILIPS/飞利浦 |
21+ |
TO-263 |
9852 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
N |
23+ |
SOT404(D |
6000 |
原装正品，支持实单 |
询价 | ||
PHILIPS/飞利浦 |
2022+ |
SOT404(D2PAK) |
48000 |
只做原装,原装,假一罚十 |
询价 | ||
PHILIPS/飞利浦 |
20+ |
TO-263 |
32500 |
现货很近!原厂很远!只做原装 |
询价 |
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