G50N03K规格书原装现货谷峰半导体GOFORD-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
G50N03K	文件：541.12 Kbytes Page：6 Pages	丝印：G50N03；Package：TO-252；N-Channel Enhancement Mode Power MOSFET Description The G50N03K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件：541.12 Kbytes 页数：6 Pages	GOFORD 谷峰半导体	GOFORD
G50N03KA	文件：925.2 Kbytes Page：6 Pages	丝印：G50N03；Package：TO-252；N-Channel Enhancement Mode Power MOSFET Description The G50N03KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters 文件：925.2 Kbytes 页数：6 Pages	GOFORD 谷峰半导体	GOFORD
G50N03K	文件：300 bytes Page：1 Pages	Trench Mosfet	GOFORD 谷峰半导体	GOFORD
G50N03KA	文件：300 bytes Page：1 Pages	MOSFET Power MOSFETs find widespread use across various applications due to their low ON resistance, making them particularly appealing. By minimizing power dissipation, they contribute to cost reduction, smaller form factors, and less cooling requirements, resulting in significant enhancements for electro	GOFORD 谷峰半导体	GOFORD

更多G50N03K供应商更新时间2025-10-17 15:01:00