G-Series Power Receptacle Connector: Female, front mount with flange, 4-pin (3PE; PE at cable outlet), grey body; 230 V AC/DC, 10 A

Product Description G-Series Power Receptacle Connector: Female, front mount with flange, 4-pin (3+PE; PE at cable outlet), grey body; 230 V AC/DC, 10 A

文件：474.49 Kbytes 页数：2 Pages

BELDEN

百通

G-Series Power Receptacle Connector: Male, front mount with flange, 4-pin (3PE; PE at cable outlet), grey body; 230 V AC/DC, 10 A

Product Description G-Series Power Receptacle Connector: Male, front mount with flange, 4-pin (3+PE; PE at cable outlet), grey body; 230 V AC/DC, 10 A

文件：437.2 Kbytes 页数：2 Pages

BELDEN

百通

G-Series Power Receptacle Connector: Male, front mount with flange, 4-pin (3PE; PE at cable outlet), black body; 230 V AC/DC, 10 A

Product Description G-Series Power Receptacle Connector: Male, front mount with flange, 4-pin (3+PE; PE at cable outlet), black body; 230 V AC/DC, 10 A

文件：343.16 Kbytes 页数：2 Pages

BELDEN

百通

High speed switching series third generation

TRENCHSTOP technology offering • very low turn-off energy • low VCEsat • low EMI • maximum junction temperature 175°C • qualified according to JEDEC for target applications • Pb-free lead plating, halogen-free mould compound, RoHS compliant

文件：2.10965 Mbytes 页数：14 Pages

INFINEON

英飞凌

丝印：G30N02；Package：TO-252；Power switching application

Description The G30N02 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application Power switching application Load switching LED power supply

文件：2.05679 Mbytes 页数：7 Pages

GOFORD

谷峰半导体

丝印：G30N02；Package：TO-220；Power switching application

Description The G30N02 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application Power switching application Load switching LED power supply

文件：2.05679 Mbytes 页数：7 Pages

GOFORD

谷峰半导体

丝印：G30N03；Package：DFN3X3-8L；N-Channel Enhancement Mode Power MOSFET

Description The G30N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：717.11 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G30N03A；Package：DFN3X3-8L；N-Channel Enhancement Mode Power MOSFET

Description The G30N03D3A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：994.98 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G30N03L；Package：DFN3X3-8L；N-Channel Enhancement Mode Power MOSFET

Description The G30N03D3-L uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：728.73 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G30N04；Package：DFN3X3-8L；N-Channel Enhancement Mode Power MOSFET

Description The G30N04D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：732.28 Kbytes 页数：6 Pages

GOFORD

谷峰半导体