G30M65DF2AG

型号：STGHU30M65DF2AG；Package：HU3PAK；Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT in an HU3PAK package

Features •AEC-Q101qualified •Maximumjunctiontemperature:TJ=175°C •6μsofminimumshort-circuitwithstandtime •VCE(sat)=1.6V(typ.)@IC=30A •Tightparameterdistribution •Saferparalleling •Lowthermalresistance •Softandveryfast-recoveryantiparalleldiode •Exc

G30H65DFB2

型号：STGWA30H65DFB2；Package：TO-247；Trench gate field-stop, 650 V, 30 A, high-speed HB2 series IGBT in a TO-247 long leads package

Features •Maximumjunctiontemperature:TJ=175°C •LowVCE(sat)=1.65V(typ.)@IC=30A •Veryfastandsoftrecoveryco-packageddiode •Minimizedtailcurrent •Tightparameterdistribution •Lowthermalresistance •PositiveVCE(sat)temperaturecoefficient Applications •We

G30A

型号：SN74ALS30ADB；Package：SSOP；8-INPUT POSITIVE-NAND GATES

G30A

型号：SN74ALS30ADBE4；Package：SSOP；8-INPUT POSITIVE-NAND GATES

G30M65DF2

型号：STGF30M65DF2；Package：TO-220FP；Trench gate field-stop IGBT, M series 650 V, 30 A low-loss in a TO-220FP package