丝印：G300P06；Package：DFN3X3-8L；P-Channel Enhancement Mode Power MOSFET

Description The G300P06D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：856.31 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G300P06；Package：DFN5X6-8L；P-Channel Enhancement Mode Power MOSFET

Description The G300P06D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：975.93 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G300P06；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The G300P06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：648.83 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G300P06；Package：SOP-8；P-Channel Enhancement Mode Power MOSFET

Description The G300P06S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.00023 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G300P06；Package：TO-220；P-Channel Enhancement Mode Power MOSFET

Description The G300P06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：976.11 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G300P06；Package：DFN3X3-8L；P-Channel Enhancement Mode Power MOSFET

Description The G300P06D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：856.31 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G300P06；Package：DFN5X6-8L；P-Channel Enhancement Mode Power MOSFET

Description The G300P06D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：975.93 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G300P06；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The G300P06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：648.83 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G300P06；Package：SOP-8；P-Channel Enhancement Mode Power MOSFET

Description The G300P06S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.00023 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G300P06；Package：TO-220；P-Channel Enhancement Mode Power MOSFET

Description The G300P06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：976.11 Kbytes 页数：6 Pages

GOFORD

谷峰半导体