G30N03D3

Marking：G30N03；Package：DFN3X3-8L；N-Channel Enhancement Mode Power MOSFET

Description TheG30N03D3usesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

G30N03D3A

Marking：G30N03A；Package：DFN3X3-8L；N-Channel Enhancement Mode Power MOSFET

Description TheG30N03D3Ausesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. AEC-Q101Qualified Application lPowerswitch lDC/DCconverters

G30N03D3-L

Marking：G30N03L；Package：DFN3X3-8L；N-Channel Enhancement Mode Power MOSFET

Description TheG30N03D3-Lusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

G30N04D3

Marking：G30N04；Package：DFN3X3-8L；N-Channel Enhancement Mode Power MOSFET

Description TheG30N04D3usesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

IGP30N60H3

Marking：G30H603；Package：PG-TO220-3；High speed switching series third generation

TRENCHSTOPtechnologyoffering •verylowturn-offenergy •lowVCEsat •lowEMI •maximumjunctiontemperature175°C •qualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating,halogen-freemouldcompound,RoHScompliant

IGW30N100T

Marking：G30T100；Package：PG-TO247-3；Low Loss IGBT: IGBT in TrenchStop and Fieldstop technology

LowLossIGBT:IGBTinTrenchStop®andFieldstoptechnology •TrenchStop®andFieldstoptechnologyfor1000Vapplications offers: -lowVCEsat -verytightparameterdistribution -highruggedness,temperaturestablebehavior -positivetemperaturecoefficientinVCEsat •Designedf

IGW30N60T

Marking：G30T60；Package：PG-TO247-3；Low Loss IGBT : IGBT in TRENCHSTOP??and Fieldstop technology

Features: VerylowVCE(sat)1.5V(typ.) MaximumJunctionTemperature175°C Shortcircuitwithstandtime5s Designedfor: -FrequencyConverters -UninterruptiblePowerSupply TRENCHSTOP™andFieldstoptechnologyfor600Vapplications offers: -verytightparameterdistributio

SGP30N60HS

Marking：G30N60HS；Package：PG-TO-220-3-1；High Speed IGBT in NPT-technology 30 lower Eoff compared to previous generation

HighSpeedIGBTinNPT-technology •30lowerEoffcomparedtopreviousgeneration •Shortcircuitwithstandtime–10µs •Designedforoperationabove30kHz •NPT-Technologyfor600Vapplicationsoffers: -parallelswitchingcapability -moderateEoffincreasewithtemperature -verytigh

SGW30N60HS

Marking：G30N60HS；Package：PG-TO-247-3；High Speed IGBT in NPT-technology 30 lower Eoff compared to previous generation

HighSpeedIGBTinNPT-technology •30lowerEoffcomparedtopreviousgeneration •Shortcircuitwithstandtime–10µs •Designedforoperationabove30kHz •NPT-Technologyfor600Vapplicationsoffers: -parallelswitchingcapability -moderateEoffincreasewithtemperature -verytigh

STGB30H65DFB2

Marking：G30H65DFB2；Trench gate field-stop, 650 V, 30 A, high-speed HB2 series IGBT in a D²PAK package

Features •Maximumjunctiontemperature:TJ=175°C •LowVCE(sat)=1.65V(typ.)@IC=30A •Veryfastandsoftrecoveryco-packageddiode •Minimizedtailcurrent •Tightparameterdistribution •Lowthermalresistance •PositiveVCE(sat)temperaturecoefficient Applications •We