丝印：G28；Package：MLF-62x2；500mA-Peak Output LDO Regulator

文件：405.21 Kbytes 页数：14 Pages

Micrel

麦瑞半导体

丝印：G28；Package：SOT-23；N-CHANNEL MOSFET FOR SWITCHING

文件：172.59 Kbytes 页数：8 Pages

RENESAS

瑞萨

丝印：G28N02；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The G28N02T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application ⚫ Power switch ⚫ DC/DC converters

文件：795.24 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G28N03；Package：DFN3X3-8L；N-Channel Enhancement Mode Power MOSFET

Description The G28N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：713.01 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G2855；Package：TSSOP(DA)；MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply-Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 250 μA at 1 MHz, 2.2 V – Standby Mode: 0.7 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture,

文件：1.80339 Mbytes 页数：75 Pages

TI

德州仪器

丝印：G2855；Package：TSSOP(DA)；MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply-Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 250 μA at 1 MHz, 2.2 V – Standby Mode: 0.7 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture,

文件：1.80339 Mbytes 页数：75 Pages

TI

德州仪器

丝印：G2855；Package：TSSOP(DA)；MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply-Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 250 μA at 1 MHz, 2.2 V – Standby Mode: 0.7 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture,

文件：1.80339 Mbytes 页数：75 Pages

TI

德州仪器

丝印：G2855；Package：TSSOP(DA)；MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply-Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 250 μA at 1 MHz, 2.2 V – Standby Mode: 0.7 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture,

文件：1.80339 Mbytes 页数：75 Pages

TI

德州仪器

丝印：G2855；Package：VQFN(RHA)；MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply-Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 250 μA at 1 MHz, 2.2 V – Standby Mode: 0.7 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture,

文件：1.80339 Mbytes 页数：75 Pages

TI

德州仪器

丝印：G2855；Package：VQFN(RHA)；MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply-Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 250 μA at 1 MHz, 2.2 V – Standby Mode: 0.7 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture,

文件：1.80339 Mbytes 页数：75 Pages

TI

德州仪器