QN7002

Marking：G28；Package：SOT-23；N-CHANNEL MOSFET FOR SWITCHING

QN7002_15

N-CHANNEL MOSFET FOR SWITCHING

RCLAMP7002M

RailClamp짰LowCapacitanceTVSDiodeArray

RCLAMP7002M

RailClamp짰LowCapacitanceTVSDiodeArray

Description RailClamp®TVSdiodearraysarespecificallydesignedtoprotectsensitivecomponentswhichareconnectedtohigh-speeddataandtransmissionlinesfromovervoltagecausedbyESD(electrostaticdischarge),CDE(CableDischargeEvents),andEFT(electricalfasttransients).TheRClamp®700

RCLAMP7002M.TBT

RailClamp짰LowCapacitanceTVSDiodeArray

Description RailClamp®TVSdiodearraysarespecificallydesignedtoprotectsensitivecomponentswhichareconnectedtohigh-speeddataandtransmissionlinesfromovervoltagecausedbyESD(electrostaticdischarge),CDE(CableDischargeEvents),andEFT(electricalfasttransients).TheRClamp®700

RCLAMP7002M.TBT

RailClamp짰LowCapacitanceTVSDiodeArray

RK7002

Interfaceandswitching(60V,115mA)

●Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)Low-voltagedrive. 4)Easilydesigneddrivecircuits. 5)Easytoparallel.

RK7002

Interfaceandswitching(60V,115mA)

●Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)Low-voltagedrive. 4)Easilydesigneddrivecircuits. 5)Easytoparallel.

RK7002A

Switching(60V,300mA)

Features 1)Lowon-resistance. 2)HighESD 3)High-speedswitching. 4)Low-voltagedrive(4V). 5)Easilydesigneddrivecircuits. 6)Easytouseinparallel.

RK7002B

2.5VDriveNchMOSFET

2.5VDriveNchMOSFET Features 1)Highspeedswiting. 2)Smallpackage(SST3). 3)Lowvoltagedrive(2.5Vdrive). Application Switching Structure SiliconN-channelMOSFET