丝印：G26P04；Package：DFN5/6-8L；P-Channel Enhancement Mode Power MOSFET

Description The G26P04D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application ⚫ Power switch ⚫ DC/DC converters

文件：1.15375 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G26P04；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The G26P04K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：657.17 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G26P04；Package：DFN5/6-8L；P-Channel Enhancement Mode Power MOSFET

Description The G26P04D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application ⚫ Power switch ⚫ DC/DC converters

文件：1.15375 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G26P04；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The G26P04K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：657.17 Kbytes 页数：6 Pages

GOFORD

谷峰半导体