丝印：G230P06；Package：DFN5X6-8L；P-Channel Enhancement Mode Power MOSFET

Description The G230P06D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：961.58 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G230P06；Package：TO-220F；P-Channel Enhancement Mode Power MOSFET

Description The G230P06F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：641.54 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G230P06；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The G230P06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：624.27 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G230P06；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The G230P06KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：918.05 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G230P06；Package：TO-263；P-Channel Enhancement Mode Power MOSFET

Description The G230P06M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.02221 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G230P06；Package：SOP-8；P-Channel Enhancement Mode Power MOSFET

Description The G230P06S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：953.81 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G230P06；Package：TO-220；P-Channel Enhancement Mode Power MOSFET

Description The G230P06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：918.32 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G230P06；Package：DFN5X6-8L；P-Channel Enhancement Mode Power MOSFET

Description The G230P06D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：961.58 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G230P06；Package：TO-220F；P-Channel Enhancement Mode Power MOSFET

Description The G230P06F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：641.54 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G230P06；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The G230P06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：624.27 Kbytes 页数：6 Pages

GOFORD

谷峰半导体