丝印：G24；Package：SOT-23；Plastic-Encapsulate Diodes

DESCRIPTION Low capacitance bidirectional double ElectroStatic Discharge (ESD) protection diode in a small SOT-23 Surface-Mounted Device (SMD) plastic package designed to protect two data lines from the damage caused by ESD and other transients. FEATURES  Bi-directional ESD protection of t

文件：1.95793 Mbytes 页数：4 Pages

GWSEMI

唯圣电子

丝印：G24；Package：SOT-23；Plastic-Encapsulate Diodes

DESCRIPTION Low capacitance bidirectional double ElectroStatic Discharge (ESD) protection diode in a small SOT-23 Surface-Mounted Device (SMD) plastic package designed to protect two data lines from the damage caused by ESD and other transients. FEATURES  Bi-directional ESD protection of t

文件：252.83 Kbytes 页数：4 Pages

GWSEMI

唯圣电子

丝印：G24；Package：DO-214AC；Zener Diodes

文件：1.54174 Mbytes 页数：3 Pages

LUGUANG

鲁光电子

丝印：G24；Package：SOT-23；P-CHANNEL ENHANCEMENT MODE MOSFET

文件：129.59 Kbytes 页数：2 Pages

TYSEMI

台湾TY半导体

丝印：G2402；Package：TSSOP(PW)；MIXED SIGNAL MICROCONTROLLER

1FEATURES 23• Low Supply Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architectur

文件：1.8245 Mbytes 页数：75 Pages

TI

德州仪器

丝印：G2402；Package：TSSOP(PW)；MIXED SIGNAL MICROCONTROLLER

1FEATURES 23• Low Supply Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architectur

文件：1.8245 Mbytes 页数：75 Pages

TI

德州仪器

丝印：G2402；Package：TSSOP(PW)；MIXED SIGNAL MICROCONTROLLER

1FEATURES 23• Low Supply Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architectur

文件：1.8245 Mbytes 页数：75 Pages

TI

德州仪器

丝印：G2402；Package：TSSOP(PW)；MIXED SIGNAL MICROCONTROLLER

1FEATURES 23• Low Supply Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architectur

文件：1.8245 Mbytes 页数：75 Pages

TI

德州仪器

丝印：G2402；Package：TSSOP(PW)；MIXED SIGNAL MICROCONTROLLER

1FEATURES 23• Low Supply Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architectur

文件：1.8245 Mbytes 页数：75 Pages

TI

德州仪器

丝印：G2402；Package：TSSOP(PW)；MIXED SIGNAL MICROCONTROLLER

1FEATURES 23• Low Supply Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architectur

文件：1.8245 Mbytes 页数：75 Pages

TI

德州仪器