丝印：G250N03；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description The G250N03IE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：876.29 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G250N03；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description The G250N03IEA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.14819 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G250N03；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description The G250N03IE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：876.29 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G250N03；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description The G250N03IEA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.14819 Mbytes 页数：6 Pages

GOFORD

谷峰半导体