丝印：g25；Package：SOT753；Bus buffer/line driver; 3-state

1. General description XC7SET125 is a high-speed Si-gate CMOS devices. It provides one non-inverting buffer/line driver with 3-state output. The 3-state output is controlled by the output enable input (OE). A HIGH at OE causes the output to assume a high-impedance OFF-state. 2. Features and be

文件：225.2 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：G250N03；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description The G250N03IE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：876.29 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G250N03；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description The G250N03IEA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.14819 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G25N06；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G25N06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：665.72 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G25H1203；Package：PG-TO247-3；IGW25N120H3

Features: TRENCHSTOPTMtechnologyoffering •bestinclassswitchingperformance:lessthan500µJtotal switchinglossesachievable •verylowVCEsat •lowEMI •maximumjunctiontemperature175°C •qualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •completeproductspectrumandPSpic

文件：2.31905 Mbytes 页数：16 Pages

Infineon

英飞凌

丝印：G25T120；Package：PG-TO-247-3；Low Loss IGBT in TrenchStop짰 and Fieldstop technology

Low Loss IGBT in TrenchStop® and Fieldstop technology • Short circuit withstand time – 10µs • Designed for : - Frequency Converters - Uninterrupted Power Supply • TrenchStop® and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedne

文件：355.31 Kbytes 页数：12 Pages

Infineon

英飞凌

丝印：G25H120DF2；Package：TO-247；Trench gate field-stop IGBT, H series 1200 V, 25 A high speed

Description These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency conve

文件：737.22 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

丝印：G25M120DF3；Package：TO-247；Trench gate field-stop IGBT, M series 1200 V, 25 A low loss

Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability

文件：1.05112 Mbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

丝印：G25S120DF3；Package：TO-247；Trench gate field-stop IGBT, S series 1200 V, 25 A low drop

Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the S series of 1200 V IGBTs which is tailored to maximize efficiency of low frequency industrial systems. Furthermore, a positive VCE(sat) temperature coeffici

文件：703.28 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

丝印：G25H120DF2；Package：TO-247；Trench gate field-stop IGBT, H series 1200 V, 25 A high speed

Description These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency conve

文件：737.22 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体