G230P06M中文资料下载库存现货谷峰半导体-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
G230P06M	文件：1.02221 Mbytes Page：6 Pages	丝印：G230P06；Package：TO-263；P-Channel Enhancement Mode Power MOSFET Description The G230P06M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件：1.02221 Mbytes 页数：6 Pages	GOFORD 谷峰半导体	GOFORD
G230P06M	文件：300 bytes Page：1 Pages	Trench Mosfet	GOFORD 谷峰半导体	GOFORD
G230P06S	文件：953.81 Kbytes Page：6 Pages	P-Channel Enhancement Mode Power MOSFET Description The G230P06S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件：953.81 Kbytes 页数：6 Pages	GOFORD 谷峰半导体	GOFORD
G230P06T	文件：918.32 Kbytes Page：6 Pages	P-Channel Enhancement Mode Power MOSFET Description The G230P06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件：918.32 Kbytes 页数：6 Pages	GOFORD 谷峰半导体	GOFORD

更多G230P06M供应商更新时间2025-10-5 11:06:00