| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
G2312 | 丝印：G2312；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET Description The G2312 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件：839.77 Kbytes 页数：6 Pages | GOFORD 谷峰半导体 | GOFORD | |
丝印：G2312；Package：TSSOP(PW)；MIXED SIGNAL MICROCONTROLLER 1FEATURES 23• Low Supply Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architectur 文件：1.79331 Mbytes 页数：77 Pages | TI 德州仪器 | TI | ||
丝印：G2312；Package：TSSOP(PW)；MIXED SIGNAL MICROCONTROLLER 1FEATURES 23• Low Supply Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architectur 文件：1.79331 Mbytes 页数：77 Pages | TI 德州仪器 | TI | ||
丝印：G2312；Package：TSSOP(PW)；MIXED SIGNAL MICROCONTROLLER 1FEATURES 23• Low Supply Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architectur 文件：1.79331 Mbytes 页数：77 Pages | TI 德州仪器 | TI | ||
丝印：G2312；Package：TSSOP(PW)；MIXED SIGNAL MICROCONTROLLER 1FEATURES 23• Low Supply Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architectur 文件：1.79331 Mbytes 页数：77 Pages | TI 德州仪器 | TI | ||
丝印：G2312；Package：TSSOP(PW)；MIXED SIGNAL MICROCONTROLLER 1FEATURES 23• Low Supply Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architectur 文件：1.79331 Mbytes 页数：77 Pages | TI 德州仪器 | TI | ||
丝印：G2312；Package：TSSOP(PW)；MIXED SIGNAL MICROCONTROLLER 1FEATURES 23• Low Supply Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architectur 文件：1.79331 Mbytes 页数：77 Pages | TI 德州仪器 | TI | ||
G2312 | 丝印：G2312；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET Description The G2312 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件：839.77 Kbytes 页数：6 Pages | GOFORD 谷峰半导体 | GOFORD | |
G2312 | Break-Away Bumpers 文件：132.1 Kbytes 页数：1 Pages | HEYCO | HEYCO | |
G2312 | Break-Away Bumpers 文件：132.09 Kbytes 页数：1 Pages | HEYCO | HEYCO |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI |
24+ |
原厂原封 |
10000 |
只做原装 |
询价 | ||
TI |
1651+ |
? |
14860 |
只做原装进口,假一罚十 |
询价 | ||
17+ |
NA |
9988 |
全新原装现货 |
询价 | |||
TI |
23+ |
NA |
32510 |
专业电子元器件供应链正迈科技特价代理特价，原装元器件供应，支持开发样品 |
询价 | ||
TI |
23+ |
NA |
366 |
专做原装正品,假一罚百! |
询价 | ||
Texas Instruments |
20+ |
TSSOP-20 |
29860 |
TI微控制器MCU-可开原型号增税票 |
询价 | ||
TI |
ROHS+Original |
NA |
32510 |
专业电子元器件供应链/QQ 350053121 /正纳电子 |
询价 | ||
TI(德州仪器) |
2447 |
TSSOP-20 |
31500 |
70个/管一级代理专营品牌!原装正品,优势现货,长期 |
询价 | ||
TI |
25+ |
SSOP-20 |
4854 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
TI(德州仪器) |
2021+ |
TSSOP-20 |
503 |
询价 |
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