丝印：G23；MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2158 is an N-channel vertical type MOS FET featuring an operating voltage as low as 1.5 V. Because it can be driven on a low voltage and it is not necessary to consider driving current, the 2SK2158 is suitable for use in low-voltage portabl

文件：266 Kbytes 页数：8 Pages

RENESAS

瑞萨

丝印：G23；Package：SC-59；MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOSFET FOR HIGH-SPEED SWITCHING The 2SK2158A is an N-channel vertical type MOSFET featuring an operating voltage as low as 1.5 V. Because it can be driven on a low voltage and it is not necessary to consider driving current, the 2SK2158A is suitable for use in lowvoltage portable s

文件：258.839 Kbytes 页数：7 Pages

RENESAS

瑞萨

丝印：G23；Package：SC-59；MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOSFET FOR HIGH-SPEED SWITCHING The 2SK2158A is an N-channel vertical type MOSFET featuring an operating voltage as low as 1.5 V. Because it can be driven on a low voltage and it is not necessary to consider driving current, the 2SK2158A is suitable for use in lowvoltage portable s

文件：258.839 Kbytes 页数：7 Pages

RENESAS

瑞萨

丝印：G23；Package：SOT-23；N-CHANNEL ENHANCEMENT MODE MOSFET

文件：165.18 Kbytes 页数：6 Pages

DIODES

美台半导体

丝印：G2304；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description The G2304 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：814.08 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G2304；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description The G2304A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.00857 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G2305；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

Description The G2305 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：820.68 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G2305；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

Description The G2305A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.01209 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G230P06；Package：DFN5X6-8L；P-Channel Enhancement Mode Power MOSFET

Description The G230P06D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：961.58 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G230P06；Package：TO-220F；P-Channel Enhancement Mode Power MOSFET

Description The G230P06F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：641.54 Kbytes 页数：6 Pages

GOFORD

谷峰半导体