P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The G2305A provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. The G2305A is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. F

文件：384.25 Kbytes 页数：4 Pages

GTM

勤益投资控股

丝印：G2305；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

Description The G2305A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.01209 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

P-Channel Enhancement Mode Power MOSFET

Description The G2305A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.01209 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

P-Channel Enhancement Mode Power MOSFET

Description The G2305A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.01209 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

P - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

文件：388.47 Kbytes 页数：4 Pages

ETL

亚历电子

MOSFET

Power MOSFETs find widespread use across various applications due to their low ON resistance, making them particularly appealing. By minimizing power dissipation, they contribute to cost reduction, smaller form factors, and less cooling requirements, resulting in significant enhancements for electro

GOFORD

谷峰半导体

P - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

ETL

亚历电子

POWER MOSFET

GTM

勤益投资控股