丝印：G2305；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

Description The G2305 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：820.68 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G2305；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

Description The G2305A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.01209 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G2305；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

Description The G2305 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：820.68 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G2305；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

Description The G2305A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.01209 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The G2305 provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The G2305 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

文件：382.1 Kbytes 页数：4 Pages

GTM

勤益投资控股

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The G2305A provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. The G2305A is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. F

文件：384.25 Kbytes 页数：4 Pages

GTM

勤益投资控股

P-Channel Enhancement Mode Power MOSFET

Description The G2305A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.01209 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

P-Channel Enhancement Mode Power MOSFET

Description The G2305A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.01209 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

P - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

文件：394.37 Kbytes 页数：4 Pages

ETL

亚历电子

P - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

文件：388.47 Kbytes 页数：4 Pages

ETL

亚历电子