丝印：G2304；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description The G2304 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：814.08 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The G2304 provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. Features • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged Applications • Power Management in Notebook Computer • Portable Equipmen

文件：390.54 Kbytes 页数：4 Pages

GTM

勤益投资控股

N - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

文件：402.31 Kbytes 页数：4 Pages

ETL

亚历电子

丝印：G2304；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description The G2304A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.00857 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

N - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

ETL

亚历电子

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM

勤益投资控股

Trench Mosfet

GOFORD

谷峰半导体

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The G2304A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The G2304A is universally used for all commercial-industrial applications. Features * Simple Drive Requirement * Small Package Outlin

文件：371.04 Kbytes 页数：4 Pages

GTM

勤益投资控股

N - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

文件：374.52 Kbytes 页数：4 Pages

ETL

亚历电子