| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Marking：G2012；Package：DFN2/2-6L；N-Channel Enhancement Mode Power MOSFET Description TheG2012usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatecharge.Itcanbeusedinawidevarietyofapplications. Application ⚫Powerswitch ⚫DC/DCconverters | GOFORDGOFORD SEMICONDUCTOR 谷峰半导体 | GOFORD | ||
Marking：G2012；Package：DFN2/2-6L；N-Channel Enhancement Mode Power MOSFET Description TheG2012AusesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatecharge.Itcanbeusedinawidevarietyofapplications. AEC-Q101Qualified Application ⚫Powerswitch ⚫DC/DCconverters | GOFORDGOFORD SEMICONDUCTOR 谷峰半导体 | GOFORD | ||
Marking：G20N03；Package：DFN2X2-6L；N-Channel Enhancement Mode Power MOSFET Description TheG20N03D2usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application ⚫Powerswitch ⚫DC/DCconverters | GOFORDGOFORD SEMICONDUCTOR 谷峰半导体 | GOFORD | ||
Marking：G20N03；Package：TO-252；N-Channel Enhancement Mode Power MOSFET Description TheG20N03Kusesadvancedtrenchtechnologytoprovide excellentR DS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application Powerswitch DC/DCconverters | GOFORDGOFORD SEMICONDUCTOR 谷峰半导体 | GOFORD | ||
Marking：G20N06；Package：DFN5/6-8LDual；N-Channel Enhancement Mode Power MOSFET Description TheG20N06D52usesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters | GOFORDGOFORD SEMICONDUCTOR 谷峰半导体 | GOFORD | ||
Marking：G20P06；Package：TO-252；P-Channel Enhancement Mode Power MOSFET Description TheG20P06Kusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeused inawidevarietyofapplications. Application lPowerswitch lDC/DCconverters | GOFORDGOFORD SEMICONDUCTOR 谷峰半导体 | GOFORD | ||
Marking：G20P06；Package：TO-252；P-Channel Enhancement Mode Power MOSFET Description TheG20P06KAusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeused inawidevarietyofapplications. Application lPowerswitch lDC/DCconverters | GOFORDGOFORD SEMICONDUCTOR 谷峰半导体 | GOFORD | ||
Marking：G20P10；Package：TO-252；P-Channel Enhancement Mode Power MOSFET Description TheG20P10KEusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters | GOFORDGOFORD SEMICONDUCTOR 谷峰半导体 | GOFORD | ||
Marking：G20N60C3；Package：TO-263AB；45A, 600V, UFS Series N-Channel IGBT ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderately | Intersil Intersil Corporation | Intersil | ||
Marking：G20N60C3；Package：TO-247；45A, 600V, UFS Series N-Channel IGBT ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderately | Intersil Intersil Corporation | Intersil |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
- 性质：
射频/高频放大 （HF）_静噪放大 （LN）_宽频带放大
- 封装形式：
直插封装
- 极限工作电压：
- 最大电流允许值：
0.1A
- 最大工作频率：
<1MHZ或未知
- 引脚数：
3
- 可代换的型号：
- 最大耗散功率：
0.625W
- 放大倍数：
- 图片代号：
A-11
- vtest：
0
- htest：
999900
- atest：
0.1
- wtest：
0.625
详细参数
- 型号：
G20
- 制造商：
VPC
- 制造商全称：
VPC
- 功能描述：
Protective Cover, G20, Receiver
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
XP Power |
24+ |
N/A |
12000 |
一级代理保证进口原装正品假一罚十价格合理 |
询价 | ||
WESTCODE |
23+ |
模块 |
900 |
全新原装正品,量大可订货!可开17%增值票!价格优势! |
询价 | ||
FSC |
23+ |
TO3P |
9526 |
询价 | |||
哈里斯 |
06+ |
TO-247 |
3500 |
原装 |
询价 | ||
H |
24+ |
TO247 |
3000 |
询价 | |||
VISHAY |
24+/25+ |
343 |
原装正品现货库存价优 |
询价 | |||
NVIDIA |
08+ |
BGA |
1 |
询价 | |||
INF |
16+ |
TO-3P |
10000 |
全新原装现货 |
询价 | ||
哈里斯 |
23+ |
TO-247 |
3000 |
全新原装 |
询价 | ||
MNC |
2016+ |
DIP20 |
8850 |
只做原装,假一罚十,公司专营变压器,滤波器! |
询价 |
