G100P04KH

Marking：G100P04H-HZR；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description TheG100P04KHusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

IGQ100N120S7

Marking：G100MS7；Package：PG-TO247-3-PLUS-NN3.7；Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology

Features •VCE=1200V •IC=100A •LowsaturationvoltageVCEsat=2.0VatTvj=175°C •Shortcircuitruggedness8μs •Widerangeofdv/dtcontrollability •CompleteproductspectrumandPSpiceModels:http://www.infineon.com/igbt/ Potentialapplications •Industrialpowersupplies

IGW100N60H3

Marking：G100H603；Package：PG-TO247-pin123；600V high speed switching series third generation

PJM10H02NSA

Marking：G1003A；Package：SOT-23；N- Enhancement Mode Field Effect Transistor