零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
N-ChannelPowerMOSFET DESCRIPTION Theyaredesignedforuseinapplicationssuchasswitchedmodepowersupplies,DCtoDCconverters,motorcontrol,circuitsUPSandgeneralpurposeswitchingapplications. TheNellIRF450isathree-terminalsilicondevicewithcurrentconductioncapabilityof14A,fastswitchingsp | NELLSEMINell Semiconductor Co., Ltd 尼爾半導體尼爾半導體股份有限公司 | NELLSEMI | ||
iscN-ChannelMOSFETTransistor DESCRIPTION •13A,500V •RDS(on)=0.4Ω •SOAisPowerDissipationLimited •LinearTransferCharacteristics •RelatedLiterature APPLICATIONS •Designedforapplicationssuchasswitchingregulators, switchingconvertors,motordrivers,relaydriver,anddrivers forhighpowerbipola | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-CHANNELPOWERMOSFETS FEATURES •LowRds(on))athighvoltage •ImprovedInductiveruggedness •Excellenthighvoltagestability •Fastswitchingtimes •Ruggedpolysillcongatecellstructure •LowInputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability •TO-3package(Highv | SamsungSamsung Group 三星三星半导体 | Samsung | ||
N-CHANNELPOWERMOSFET | SEME-LAB Seme LAB | SEME-LAB | ||
13A,500V,0.400Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
TRANSISTORSN-CHANNEL(Vdss=500V,Rds(on)=0.400ohm,Id=12A) TheHEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyanddio | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
13A,500V,0.400Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
HIGHVOLTAGEPOWERMOSFETDIE | IXYS IXYS Integrated Circuits Division | IXYS | ||
N-CHANNELPOWERMOSFET | SEME-LAB Seme LAB | SEME-LAB | ||
POWERMOSFETTHRU-HOLE(TO-254AA) HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance. Features: ■SimpleDriveRequirements ■EaseofParalleling ■HermeticallySeale | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
SimpleDriveRequirements | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
POWERMOSFETTHRU-HOLE(TablessTO-254AA) | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
SimpleDriveRequirements | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
POWERMOSFETSURFACEMOUNT(SMD-1) RDS(on)0.415Ω ID12A HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establ | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
SimpleDriveRequirements | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
POWERMOSFETN-CHANNEL(BVdss=500V,Rds(on)=0.415ohm,Id=12A) RDS(on)0.415Ω ID12A HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establ | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
N-CHANNELPOWERMOSFETS
| SamsungSamsung Group 三星三星半导体 | Samsung | ||
N-CHANNEL500V-0.33ohm-14A-TO-247PowerMESH]MOSFET DESCRIPTION ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAYprocess.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. ■TYPICALRDS(on)=0.33Ω ■EXTREMELYHIGHdv/dtCAPABILITY ■100AVALA | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
14A,500V,0.400Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
StandardPowerMOSFET-N-ChannelEnhancementMode N-ChannelEnhancementMode Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Lowpackageinductance( | IXYS IXYS Integrated Circuits Division | IXYS |
详细参数
- 型号:
FXT450
- 功能描述:
两极晶体管 - BJT -
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
PNP 集电极—基极电压
- VCBO:
集电极—发射极最大电压
- VCEO:
- 40 V 发射极 - 基极电压
- VEBO:
- 6 V
- 增益带宽产品fT:
直流集电极/Base Gain hfe
- Min:
100 A
- 安装风格:
SMD/SMT
- 封装/箱体:
PowerFLAT 2 x 2
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ZETEX |
20+ |
TO92 |
5500 |
代理库存,房间现货,有挂就是现货 |
询价 | ||
ZETEX |
22+ |
TO92 |
9600 |
原装现货,优势供应,支持实单! |
询价 | ||
ZETEX |
23+ |
TO92 |
50000 |
原装正品 支持实单 |
询价 | ||
ZETEX |
21+ROHS |
E-LINE |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
PacTec |
新 |
215 |
全新原装 货期两周 |
询价 | |||
PacTec |
2022+ |
211 |
全新原装 货期两周 |
询价 | |||
ZTX |
06+ |
原厂原装 |
2051 |
只做全新原装真实现货供应 |
询价 | ||
ROHM |
08PB |
SOT153 |
5000 |
询价 | |||
ZETEX |
2023+ |
SOT-92 |
5800 |
进口原装,现货热卖 |
询价 | ||
ZXTEX |
23+ |
SOT-92 |
5000 |
原装正品,假一罚十 |
询价 |
相关规格书
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- FXT549STOA
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- FXT550SM
- FXT550STOB
- FXT551
- FXT551STOA
- FXT551STZ
- FXT553SM
- FXT553STOB
- FXT555
- FXT555STOA
- FXT555STZ
- FXT601B
- FXT601BSTOA
- FXT601BSTZ
- FXT-6030-000-K
- FXT603STOA
- FXT603STZ
- FXT605STOA
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- FXT649
- FXT649STOA
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- FXT655