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IRF450

N-ChannelPowerMOSFET

DESCRIPTION Theyaredesignedforuseinapplicationssuchasswitchedmodepowersupplies,DCtoDCconverters,motorcontrol,circuitsUPSandgeneralpurposeswitchingapplications. TheNellIRF450isathree-terminalsilicondevicewithcurrentconductioncapabilityof14A,fastswitchingsp

NELLSEMINell Semiconductor Co., Ltd

尼爾半導體尼爾半導體股份有限公司

IRF450

iscN-ChannelMOSFETTransistor

DESCRIPTION •13A,500V •RDS(on)=0.4Ω •SOAisPowerDissipationLimited •LinearTransferCharacteristics •RelatedLiterature APPLICATIONS •Designedforapplicationssuchasswitchingregulators, switchingconvertors,motordrivers,relaydriver,anddrivers forhighpowerbipola

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF450

N-CHANNELPOWERMOSFETS

FEATURES •LowRds(on))athighvoltage •ImprovedInductiveruggedness •Excellenthighvoltagestability •Fastswitchingtimes •Ruggedpolysillcongatecellstructure •LowInputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability •TO-3package(Highv

SamsungSamsung Group

三星三星半导体

IRF450

N-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRF450

13A,500V,0.400Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

IRF450

TRANSISTORSN-CHANNEL(Vdss=500V,Rds(on)=0.400ohm,Id=12A)

TheHEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyanddio

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF450

13A,500V,0.400Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRFC450

HIGHVOLTAGEPOWERMOSFETDIE

IXYS

IXYS Integrated Circuits Division

IRFM450

N-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRFM450

POWERMOSFETTHRU-HOLE(TO-254AA)

HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance. Features: ■SimpleDriveRequirements ■EaseofParalleling ■HermeticallySeale

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFM450

SimpleDriveRequirements

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFMA450

POWERMOSFETTHRU-HOLE(TablessTO-254AA)

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFMA450

SimpleDriveRequirements

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFN450

POWERMOSFETSURFACEMOUNT(SMD-1)

RDS(on)0.415Ω ID12A HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establ

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFN450

SimpleDriveRequirements

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFN450

POWERMOSFETN-CHANNEL(BVdss=500V,Rds(on)=0.415ohm,Id=12A)

RDS(on)0.415Ω ID12A HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establ

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFP450

N-CHANNELPOWERMOSFETS

SamsungSamsung Group

三星三星半导体

IRFP450

N-CHANNEL500V-0.33ohm-14A-TO-247PowerMESH]MOSFET

DESCRIPTION ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAYprocess.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. ■TYPICALRDS(on)=0.33Ω ■EXTREMELYHIGHdv/dtCAPABILITY ■100AVALA

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

IRFP450

14A,500V,0.400Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

IRFP450

StandardPowerMOSFET-N-ChannelEnhancementMode

N-ChannelEnhancementMode Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Lowpackageinductance(

IXYS

IXYS Integrated Circuits Division

详细参数

  • 型号:

    FXT450

  • 功能描述:

    两极晶体管 - BJT -

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    PNP 集电极—基极电压

  • VCBO:

    集电极—发射极最大电压

  • VCEO:

    - 40 V 发射极 - 基极电压

  • VEBO:

    - 6 V

  • 增益带宽产品fT:

    直流集电极/Base Gain hfe

  • Min:

    100 A

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    PowerFLAT 2 x 2

供应商型号品牌批号封装库存备注价格
ZETEX
20+
TO92
5500
代理库存,房间现货,有挂就是现货
询价
ZETEX
22+
TO92
9600
原装现货,优势供应,支持实单!
询价
ZETEX
23+
TO92
50000
原装正品 支持实单
询价
ZETEX
21+ROHS
E-LINE
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
PacTec
215
全新原装 货期两周
询价
PacTec
2022+
211
全新原装 货期两周
询价
ZTX
06+
原厂原装
2051
只做全新原装真实现货供应
询价
ROHM
08PB
SOT153
5000
询价
ZETEX
2023+
SOT-92
5800
进口原装,现货热卖
询价
ZXTEX
23+
SOT-92
5000
原装正品,假一罚十
询价
更多FXT450供应商 更新时间2024-5-23 10:20:00