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IRFP450

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevelsprecludet

VishayVishay Siliconix

威世科技

IRFP450

iscN-ChannelMOSFETTransistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES •DrainCurrent–ID=14A@TC=25℃ •DrainSourceVoltage- :VDSS=500V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max) •FastSwitching

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFP450

N-CHANNELPowerMESHMOSFET

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

IRFP450

N-CHANNEL500V-0.33Q-14A-TO-247PowerMESH??MOSFET

DESCRIPTION ThispowerMOSFETisdesignedusingthecompanysconsolidatedstriplayout-basedMESHOVERLAY1process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. .TYPICALRDS(on)=0.33Ω .EXTREMELYHIGHdv/dtCAPABILITY .100AVALANC

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

IRFP450

PowerMOSFET(Vdss=500V,Rds(on)=0.40ohm,Id=14A)

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFP450

PowerMOSFET

VishayVishay Siliconix

威世科技

IRFP450

SEMICONDUCTORS

etc2List of Unclassifed Manufacturers

etc2未分类制造商

IRFP450A

PowerMOSFET

VishayVishay Siliconix

威世科技

IRFP450A

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=14A@TC=25℃ ·DrainSourceVoltage:VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance:RDS(on)=0.4Ω(Max) ·FastSwitching

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFP450A

PowerMOSFET

VishayVishay Siliconix

威世科技

IRFP450A

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技

IRFP450A

PowerMOSFET(Vdss=500V,Rds(on)max=0.40ohm,Id=14A)

Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,AvalancheandDynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ●EffectiveCossSpecified(SeeAN1001) Applications ●SwitchModePowerSupply(SMPS) ●Uninterr

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFP450APBF

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技

IRFP450APBF

HEXFET짰PowerMOSFET

Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,AvalancheandDynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ●EffectiveCossSpecified(SeeAN1001) ●Lead-Free Applications ●SwitchModePowerSupply(SMPS

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFP450APBF

PowerMOSFET

VishayVishay Siliconix

威世科技

IRFP450B

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredto minimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRFP450LC

PowerMOSFET(Vdss=500V,Rds(on)=0.40ohm,Id=14A)

VDSS=500V RDS(on)=0.40Ω ID=14A Description ThisnewseriesofLowChargeHEXFETPowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedHexfettechnologythedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeeds

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFP450LC

PowerMOSFET

VDS(V)500 RDS(on)(Ω)VGS=10V0.40 Qg(Max.)(nC)74 Qgs(nC)19 Qgd(nC)35 ConfigurationSingle DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedPowerMOSFETtechnologythedeviceimprovement

VishayVishay Siliconix

威世科技

IRFP450LC

PowerMOSFET

VishayVishay Siliconix

威世科技

IRFP450LCPBF

PowerMOSFET

VishayVishay Siliconix

威世科技

详细参数

  • 型号:

    FXT450

  • 功能描述:

    两极晶体管 - BJT -

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    PNP 集电极—基极电压

  • VCBO:

    集电极—发射极最大电压

  • VCEO:

    - 40 V 发射极 - 基极电压

  • VEBO:

    - 6 V

  • 增益带宽产品fT:

    直流集电极/Base Gain hfe

  • Min:

    100 A

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    PowerFLAT 2 x 2

供应商型号品牌批号封装库存备注价格
ZETEX
20+
TO92
5500
代理库存,房间现货,有挂就是现货
询价
ZETEX
22+
TO92
9600
原装现货,优势供应,支持实单!
询价
ZETEX
23+
TO92
50000
原装正品 支持实单
询价
ZETEX
21+ROHS
E-LINE
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
PacTec
215
全新原装 货期两周
询价
PacTec
2022+
211
全新原装 货期两周
询价
ZTX
06+
原厂原装
2051
只做全新原装真实现货供应
询价
ROHM
08PB
SOT153
5000
询价
ZETEX
2023+
SOT-92
5800
进口原装,现货热卖
询价
ZXTEX
23+
SOT-92
5000
原装正品,假一罚十
询价
更多FXT450供应商 更新时间2024-5-25 10:20:00