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IRFP450LCPBF

HEXFETPowerMOSFET

VDSS=500V RDS(on)=0.40Ω ID=14A Description ThisnewseriesofLowChargeHEXFETPowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedHexfettechnologythedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeeds

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFP450LCPBF

PowerMOSFET

VDS(V)500 RDS(on)(Ω)VGS=10V0.40 Qg(Max.)(nC)74 Qgs(nC)19 Qgd(nC)35 ConfigurationSingle DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedPowerMOSFETtechnologythedeviceimprovement

VishayVishay Siliconix

威世科技

IRFP450N

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-free APPLICATIONS •SwitchModePowerSupply(SMPS) •Uninter

VishayVishay Siliconix

威世科技

IRFP450N

PowerMOSFET(Vdss=500V,Rds(on)max=0.37ohm,Id=14A)

Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,AvalancheandDynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ●EffectiveCossSpecified(SeeAN1001) Applications ●SwitchModePowerSupply(SMPS) ●Uninterrupt

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFP450NPBF

HEXFET짰PowerMOSFET

Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,AvalancheandDynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ●EffectiveCossSpecified(SeeAN1001) Applications ●SwitchModePowerSupply(SMPS) ●Uninterrupt

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFP450NPBF

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-free APPLICATIONS •SwitchModePowerSupply(SMPS) •Uninter

VishayVishay Siliconix

威世科技

IRFP450PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevelsprecludet

VishayVishay Siliconix

威世科技

IRFP450PBF

HEXFETPOWERMOSFET

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFP450PBF

PowerMOSFET

VishayVishay Siliconix

威世科技

IRFP450R

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFS450

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRFS450

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFS450A

AdvancedPowerMOSFET(500V,0.4ohm,9.6A)

FEATURES ♦AvalancheRuggedTechnology ♦RuggedGateOxideTechnology ♦LowerInputCapacitance ♦ImprovedGateCharge ♦ExtendedSafeOperatingArea ♦LowerLeakageCurrent:10µA(Max.)@VDS=500V ♦LowerRDS(ON):0.308Ω(Typ.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRFS450A

iscSiliconNPNPowerTransistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES •AvalancheRuggedTechnology •RuggedGateOxideTechnology •LowerInputCapacitance •ImprovedGateCharge •ExtendedSafeOperatingArea

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFS450B

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRFW450

iscSiliconNPNPowerTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRGP450U

INSULATEDGATEBIPOLARTRANSISTOR(Vces=500V,@Vge=15V,Ic=33A)

Introduction Thereliabilityreportisasummaryofthetestdatacollatedsincetheimplementationofthereliabilityprogramme.Thisreportwillbeperiodicallyupdatedtypicallyonaquarterlybasis.Futurepublicationsofthisreportwillalsoincludeasappropriateadditionalinformationto

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRGP450U

FitRate/EquivalentDeviceHours

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRKDL450

SUPERMAGN-A-PAKPowerModules

Features ■HighpowerFASTrecoverydiodeseries ■Highcurrentcapability ■3000VRMSisolatingvoltagewithnon-toxicsubstrate ■Highsurgecapability ■Highvoltageratingsupto2500V ■Industrialstandardpackage ■ULrecognitionpending TypicalApplications ■SnubberforlargeGTO

IRFInternational Rectifier

英飞凌英飞凌科技公司

IS450

OPICLIGHTDETECTORWITHBULLT-INSIGNALPROCESSINGCIRCULTFORLIGHTMODULATIONSYSTEM

OPICLightDetectorwithBuilt-InSignalProcessingCircuitforLightModulationSystem Applications 1.Optoelectronicswitches 2.Copiers,printers,facsimiles

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

详细参数

  • 型号:

    FXT450

  • 功能描述:

    两极晶体管 - BJT -

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    PNP 集电极—基极电压

  • VCBO:

    集电极—发射极最大电压

  • VCEO:

    - 40 V 发射极 - 基极电压

  • VEBO:

    - 6 V

  • 增益带宽产品fT:

    直流集电极/Base Gain hfe

  • Min:

    100 A

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    PowerFLAT 2 x 2

供应商型号品牌批号封装库存备注价格
ZETEX
20+
TO92
5500
代理库存,房间现货,有挂就是现货
询价
ZETEX
22+
TO92
9600
原装现货,优势供应,支持实单!
询价
ZETEX
23+
TO92
50000
原装正品 支持实单
询价
ZETEX
21+ROHS
E-LINE
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
PacTec
215
全新原装 货期两周
询价
PacTec
2022+
211
全新原装 货期两周
询价
ZTX
06+
原厂原装
2051
只做全新原装真实现货供应
询价
ROHM
08PB
SOT153
5000
询价
ZETEX
2023+
SOT-92
5800
进口原装,现货热卖
询价
ZXTEX
23+
SOT-92
5000
原装正品,假一罚十
询价
更多FXT450供应商 更新时间2024-5-23 10:20:00