Advanced Power MOSFET (500V, 0.4ohm, 9.6A)

FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V ♦ Lower RDS(ON): 0.308Ω (Typ.)

文件：232.81 Kbytes 页数：7 Pages

Fairchild

仙童半导体

isc Silicon NPN Power Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area

文件：64.64 Kbytes 页数：2 Pages

ISC

无锡固电

Advanced Power MOSFET (500V, 0.4ohm, 9.6A)

ONSEMI

安森美半导体

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：687.65 Kbytes 页数：8 Pages

Fairchild

仙童半导体

isc Silicon NPN Power Transistor

文件：95.17 Kbytes 页数：2 Pages

ISC

无锡固电

INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=33A)

Introduction The reliability report is a summary of the test data collated since the implementation of the reliability programme. This report will be periodically updated typically on a quarterly basis. Future publications of this report will also include as appropriate additional information to

文件：260.47 Kbytes 页数：6 Pages

IRF