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IRFS59N10D

Power MOSFET(Vdss=100V, Rds(on)max=0.025ohm, Id=59A)

Benefits ●LowGate-to-DrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFS59N10D

Isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFS59N10DPBF

HEXFET Power MOSFET

Benefits ●LowGate-to-DrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters ●UPS/MotorControlInvert

IRFInternational Rectifier

英飞凌英飞凌科技公司

IIRFB59N10D

N-ChannelMOSFETTransistor

•DESCRITION •reliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤0.025Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFB59N10

PowerMOSFET(Vdss=100V,Rds(on)max=0.025ohm,Id=59A)

Benefits ●LowGate-to-DrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFB59N10D

PowerMOSFET(Vdss=100V,Rds(on)max=0.025ohm,Id=59A)

Benefits ●LowGate-to-DrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFB59N10D

N-ChannelMOSFETTransistor

•DESCRITION •reliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤0.025Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFB59N10DPBF

N-Channel100-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

IRFB59N10DPBF

HEXFETPowerMOSFET

Benefits ●LowGate-to-DrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters ●UPS/MotorControlInvert

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFB59N10DPBF

HighfrequencyDC-DCconverters

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFSL59N10D

PowerMOSFET(Vdss=100V,Rds(on)max=0.025ohm,Id=59A)

Benefits ●LowGate-to-DrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFSL59N10D

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFSL59N10DPBF

HEXFETPowerMOSFET

Benefits ●LowGate-to-DrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters ●UPS/MotorControlInvert

IRFInternational Rectifier

英飞凌英飞凌科技公司

详细参数

  • 型号:

    IRFS59N10D

  • 制造商:

    International Rectifier

  • 功能描述:

    MOSFET N D2-PAK

  • 功能描述:

    N CHANNEL MOSFET, 100V, 59A, D2-PAK, Transistor

  • Polarity:

    N Channel, Continuous D

供应商型号品牌批号封装库存备注价格
IR
21+
TO-263
6000
原装正品
询价
IR
22+
TO-263
320
只做原装进口 免费送样!!
询价
IR
21+
TO-263
60000
原装正品进口现货
询价
INFINEON
23/22+
MSOP8
2000
全线可订货.含税开票
询价
IR
23+
TO-263
18689
询价
IR
2015+
D2-Pak
12500
全新原装,现货库存长期供应
询价
IR
1116
TO-263
21168
绝对原装现货
询价
IR
13+
TO-263
9258
原装分销
询价
IR
23+
plcc-44
18000
询价
IR
08+(pbfree)
D2-Pak
8866
询价
更多IRFS59N10D供应商 更新时间2024-4-29 10:09:00