HEXFET Power MOSFET

Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current ● Lead-Free Applications ● High frequency DC-DC converters ● Plasma Displa

文件：345.45 Kbytes 页数：12 Pages

IRF

High frequency DC-DC converters

文件：330.66 Kbytes 页数：11 Pages

IRF

High frequency DC-DC converters

文件：330.66 Kbytes 页数：11 Pages

IRF

HEXFET Power MOSFET

Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current ● Lead-Free Applications ● High frequency DC-DC converters ● Plasma Displa

文件：345.45 Kbytes 页数：12 Pages

IRF

Power MOSFET(Vdss=150V, Rds(on)max=0.032ohm, Id=50A)

Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters

文件：134.84 Kbytes 页数：11 Pages

IRF

isc N-Channel MOSFET Transistor

• DESCRITION • High frequency DC-DC converters • FEATURES • Static drain-source on-resistance: RDS(on)≤32mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：330.18 Kbytes 页数：2 Pages

ISC

无锡固电