首页 >FQP18N50>规格书列表

零件编号下载&订购功能描述制造商&上传企业LOGO

MDP18N50BTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=18A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.27Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MDP18N50TH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=18A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.27Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MDP18N50TH

N-ChannelMOSFET500V,18.0A,0.27(ohm)

MGCHIP

MagnaChip Semiconductor.

MDQ18N50G

N-ChannelMOSFET500V,20.0A,0.27(ohm)

MGCHIP

MagnaChip Semiconductor.

MDQ18N50GTH

N-ChannelMOSFET500V,20.0A,0.27(ohm)

MGCHIP

MagnaChip Semiconductor.

MDQ18N50GTP

N-ChannelMOSFET500V,20.0A,0.27(ohm)

MGCHIP

MagnaChip Semiconductor.

MDQ18N50GTP

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.27Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MS18N50

500VN-channelMOSFET

BWTECHBruckewell Technology LTD

布吕克韦尔技术布吕克韦尔技术有限公司

MSF18N50

500VN-ChannelMOSFET

BWTECHBruckewell Technology LTD

布吕克韦尔技术布吕克韦尔技术有限公司

MTN18N50CFP

N-ChannelEnhancementModePowerMOSFET

CYSTEKECCystech Electonics Corp.

全宇昕科技全宇昕科技股份有限公司

SDF18N50

SuperhighdensecelldesignforlowRDS(ON).

Samhop

三合微科

SIF18N50C

N-CHANNELPOWERMOSFET

SISEMICShenzhen SI Semiconductors Co.,LTD.

赛恩半导体深圳市赛恩半导体有限公司

SIHF18N50C

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

SIHF18N50D

DSeriesPowerMOSFET

FEATURES •Optimaldesign -Lowareaspecificon-resistance -Lowinputcapacitance(Ciss) -Reducedcapacitiveswitchinglosses -Highbodydioderuggedness -Avalancheenergyrated(UIS) •Optimalefficiencyandoperation -Lowcost -Simplegatedrivecircuitry

VishayVishay Siliconix

威世科技威世科技半导体

SIHF18N50D

DSeriesPowerMOSFET

FEATURES •Optimaldesign -Lowareaspecificon-resistance -Lowinputcapacitance(Ciss) -Reducedcapacitiveswitchinglosses -Highbodydioderuggedness -Avalancheenergyrated(UIS) •Optimalefficiencyandoperation -Lowcost -Simplegatedrivecircuitry -Lowfigure-of-merit(

VishayVishay Siliconix

威世科技威世科技半导体

SIHFB18N50K

PowerMOSFET

1.LowGateChargeQgResultsinSimpleDriveRequirement 2.ImprovedGate,AvalancheandDynamicdV/dtRuggedness 3.FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent 4.LowRDS(on) 5.Lead(Pb)-freeAvailable

KERSEMI

Kersemi Electronic Co., Ltd.

SIHFB18N50K

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

SIHP18N50C

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

SIHP18N50C

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SLF18N50C

500VN-ChannelMOSFET

MAPLESMIShenzhen Meipusen Semiconductor Co., Ltd

美普森深圳市美普森半导体有限公司

详细参数

  • 型号:

    FQP18N50

  • 功能描述:

    MOSFET 500V N-Ch QFET V2 Series

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
FAIRCHILD/仙童
2024+原装现货
TO220
8950
BOM配单专家,发货快,价格低
询价
ON/安森美
22+
TO-220
12800
本公司只做原装,特价出售!
询价
onsemi(安森美)
23+
TO-220
8498
支持大陆交货,美金交易。原装现货库存。
询价
ON/安森美
2410+
TO-220
1000
原装正品.假一赔百.正规渠道.原厂追溯.
询价
仙童
06+
TO-220
5000
原装库存
询价
FSC
23+
TO-220
9526
询价
FAIRCHIL
2015+
TO-220
12500
全新原装,现货库存长期供应
询价
Fairchild
0415+
TO220
500
特价热销现货库存100%原装正品欢迎来电订购!
询价
FAIRCHILD
08+(pbfree)
TO-220
8866
询价
FAIRCHIL
23+
TO-220
7600
全新原装现货
询价
更多FQP18N50供应商 更新时间2024-6-18 16:36:00