丝印：TPM2006NHK3；Package：TO-252-3L；‘N-Channel MOSFET 200V, 6.04, 0.65Q

Features © Vos =200v + o= 60A + Rosin 50650 @Ves = 10V.

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TECHPUBLIC

台舟电子

PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use i

文件：55.02 Kbytes 页数：7 Pages

PHI

PHI

PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies

文件：51.88 Kbytes 页数：7 Pages

PHI

PHI

N - CHANNEL 200V - 0.7ohm - 5A - TO-251/TO-252 POWER MOS TRANSISTOR

N - CHANNEL 200V - 0.7Ω - 5A - TO-251/TO-252 POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.7 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 150°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED C

文件：105.09 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体