N - CHANNEL 200V - 0.7ohm - 5A - TO-251/TO-252 POWER MOS TRANSISTOR

N - CHANNEL 200V - 0.7Ω - 5A - TO-251/TO-252 POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.7 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 150°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED C

文件：105.09 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 200V - 0.6W - 5A DPAK MESH OVERLAY??MOSFET

文件：257.29 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

N-Channel 200 V (D-S) MOSFET

文件：1.64677 Mbytes 页数：10 Pages

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N - CHANNEL 200V - 0.7ohm - 5A - TO-251/TO-252 POWER MOS TRANSISTOR

ST

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N-CHANNEL 200V - 0.65廓 - 5A DPAK STripFET??MOSFET

DESCRIPTION The STD5N20L utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This is suitable for the most demanding DC Motor Control and lighting application. General Features ■ TYPICAL RDS(on) = 0.65 Ω @ 5V ■ CONDUCTION LOSSES REDUCED ■ LOW INPUT CAPACIA

文件：273.98 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 200V - 0.65廓 - 5A DPAK STripFET??MOSFET

DESCRIPTION The STD5N20L utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This is suitable for the most demanding DC Motor Control and lighting application. General Features ■ TYPICAL RDS(on) = 0.65 Ω @ 5V ■ CONDUCTION LOSSES REDUCED ■ LOW INPUT CAPACIA

文件：273.98 Kbytes 页数：10 Pages

STMICROELECTRONICS

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丝印：TPM2007NK3；Package：TO-252-3L；200V N-Channel Enhancement Mode Power MOSFET

Features Vos = 200V,lp =5.5A Ros(on)

文件：2.08128 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

N-CHANNEL 200V - 0.6W - 5A DPAK MESH OVERLAY??MOSFET

文件：257.29 Kbytes 页数：8 Pages

STMICROELECTRONICS

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N-Channel 200 V (D-S) MOSFET

文件：1.64678 Mbytes 页数：10 Pages

VBSEMI

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N-Channel 200 V (D-S) MOSFET

文件：1.69845 Mbytes 页数：10 Pages

VBSEMI

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