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FQA18N50V

500V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQA18N50V2

500V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQA18N50V2

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=20A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=265mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

18N50

18Amps,500VoltsN-CHANNELPOWERMOSFET

■DESCRIPTION TheUTC18N50isanN-channelenhancementmodepowerMOSFETusingUTC’sadvancedplanarstripeandDMOStechnologytoprovideperfectperformance. Thistechnologycanwithstandhighenergypulseintheavalancheandcommutationmode.Itcanprovideminimumon-stateresistancea

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

18N50

18A,500VN-CHANNELPOWERMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

18N50

FastSwitching

•DESCRIPTION •DrainCurrentID=18A@TC=25℃ •DrainSourceVoltage :VDSS=500V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.32Ω(Max) •FastSwitching •APPLICATIONS •Switchregulators •Switchingconverters,motordrivers,relaydrivers

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

18N50A

18A500VN-channelenhancedfieldeffecttransistor

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

18N50H

18A竊?00VN-CHANNELMOSFET

KIAGuangdong Keyia Semiconductor Technology Co., Ltd

可易亚半导体广东可易亚半导体科技有限公司

AP18N50W

N-CHANNELENHANCEMENTMODEPOWERMOSFET

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

AP18N50W-HF

FastSwitchingCharacteristic

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

FDA18N50

500VN-ChannelMOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDA18N50

PowerFactorCorrectionConverterDesign

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDA18N50

PFCPWMCombinationController

Introduction Thisapplicationnotedescribesstep-by-stepdesignconsiderationsforapowersupplyusingtheFAN480Xcontroller.TheFAN480XcombinesaPFCcontrollerandaPWMcontroller.ThePFCcontrolleremploysaveragecurrentmodecontrolforContinuousConductionMode(CCM)boostconverter

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDP18N50

PowerFactorCorrectionConverterDesign

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDP18N50

500VN-ChannelMOSFET

Description UniFET™MOSFETisFairchildSemiconductor®’shighvoltageMOSFETfamilybasedonplanarstripeandDMOStechnology.ThisMOSFETistailoredtoreduceon-stateresistance,andtoprovidebetterswitchingperformanceandhigheravalancheenergystrength.Thisdevicefamilyissuitable

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDP18N50

PFCPWMCombinationController

Introduction Thisapplicationnotedescribesstep-by-stepdesignconsiderationsforapowersupplyusingtheFAN480Xcontroller.TheFAN480XcombinesaPFCcontrollerandaPWMcontroller.ThePFCcontrolleremploysaveragecurrentmodecontrolforContinuousConductionMode(CCM)boostconverter

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDP18N50

N-ChannelUniFETTMMOSFET500V,18A,265mΩ

Description UniFETTMMOSFETisONSemiconductor’shighvoltage MOSFETfamilybasedonplanarstripeandDMOStechnology. ThisMOSFETistailoredtoreduceon-stateresistance,andto providebetterswitchingperformanceandhigheravalanche energystrength.Thisdevicefamilyissuitablefor

ONSEMION Semiconductor

安森美半导体安森美半导体公司

FDP18N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=18A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.265Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDPF18N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=18A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.265Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDPF18N50

N-ChannelUniFETTMMOSFET500V,18A,265mΩ

Description UniFETTMMOSFETisONSemiconductor’shighvoltage MOSFETfamilybasedonplanarstripeandDMOStechnology. ThisMOSFETistailoredtoreduceon-stateresistance,andto providebetterswitchingperformanceandhigheravalanche energystrength.Thisdevicefamilyissuitablefor

ONSEMION Semiconductor

安森美半导体安森美半导体公司

详细参数

  • 型号:

    FQA18N50

  • 功能描述:

    MOSFET 500V N-Ch QFET V2 Series

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
ON/安森美
2410+
TO-220
9600
原装正品.假一赔百.正规渠道.原厂追溯.
询价
仙童
06+
TO-247
800
原装库存
询价
FAIRCHILD
15+
TO-247
11560
全新原装,现货库存,长期供应
询价
FSC
2016+
TO-247
3000
只做原装,假一罚十,公司可开17%增值税发票!
询价
仙童
23+
TO-247
3000
全新原装
询价
FSC
17+
T0-3P
3026
全新原装环保
询价
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
NA
19+
71756
原厂代理渠道,每一颗芯片都可追溯原厂;
询价
harris
16+
原厂封装
10000
全新原装正品,代理优势渠道供应,欢迎来电咨询
询价
FSC
22+
TO-3P
5000
全新原装现货!自家库存!
询价
更多FQA18N50供应商 更新时间2024-6-16 16:12:00