128Kb Serial 3V F-RAM Memory

Description The FM25V01 is a 128-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while eliminating the complexities, over

文件：508.13 Kbytes 页数：15 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256Kb Serial 3V F-RAM Memory

Description The FM25V02 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while e

文件：549.39 Kbytes 页数：17 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256Kb Serial 3V F-RAM Memory

Description The FM25V02 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while e

文件：549.39 Kbytes 页数：17 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256Kb Serial 3V F-RAM Memory

Description The FM25V02 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while e

文件：549.39 Kbytes 页数：17 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256Kb Serial 3V F-RAM Memory

Description The FM25V02 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while e

文件：549.39 Kbytes 页数：17 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256Kb Serial 3V F-RAM Memory

Description The FM25V02 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while e

文件：549.39 Kbytes 页数：17 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512Kb Serial 3V F-RAM Memory

Description The FM25V05 is a 512-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while eliminating the complexities, over

文件：532.21 Kbytes 页数：16 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512Kb Serial 3V F-RAM Memory

Description The FM25V05 is a 512-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while eliminating the complexities, over

文件：532.21 Kbytes 页数：16 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512Kb Serial 3V F-RAM Memory

Description The FM25V05 is a 512-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while eliminating the complexities, over

文件：532.21 Kbytes 页数：16 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1Mb Serial 3V F-RAM Memory

Description The FM25V10 is a 1-megabit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while eliminating the complexities, over

文件：531.26 Kbytes 页数：16 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司