FM25V02-G集成电路（IC）的存储器规格书PDF中文资料

FM25V02-G属于集成电路（IC）的存储器。由赛普拉斯半导体公司制造生产的FM25V02-G存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。

描述 Description

The FM25V02 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A

ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a

RAM. It provides reliable data retention for 10 years while eliminating the complexities, overhead, and

system level reliability problems caused by Serial Flash and other nonvolatile memories.

特性 Features

256K bit Ferroelectric Nonvolatile RAM

Organized as 32,768 x 8 bits

High Endurance 100 Trillion (1014) Read/Writes

10 Year Data Retention

NoDelay™ Writes

Advanced High-Reliability Ferroelectric Process

Very Fast Serial Peripheral Interface - SPI

Up to 40 MHz Frequency

Direct Hardware Replacement for Serial Flash

SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)

Write Protection Scheme

Hardware Protection

Software Protection

Device ID

Device ID reads out Manufacturer ID & Part ID

Low Voltage, Low Power

Low Voltage Operation 2.0V – 3.6V

90 A Standby Current (typ.)

5 A Sleep Mode Current (typ.)

Industry Standard Configurations

Industrial Temperature -40 C to +85 C

8-pin “Green”/RoHS SOIC Package

8-pin “Green”/RoHS TDFN Package