FM25V02-DGTR集成电路（IC）的存储器规格书PDF中文资料

厂商型号	FM25V02-DGTR
参数属性	FM25V02-DGTR 封装/外壳为8-WDFN 裸露焊盘；包装为卷带（TR）；类别为集成电路（IC）的存储器；产品描述：IC FRAM 256KBIT SPI 40MHZ 8TDFN
功能描述	256Kb Serial 3V F-RAM Memory
封装外壳	8-WDFN 裸露焊盘
文件大小	549.39 Kbytes
页面数量	17 页
生产厂商	CYPRESS CypressSemiconductor
中文名称	赛普拉斯赛普拉斯半导体公司
网址	网址
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-8-9 19:39:00
人工找货	FM25V02-DGTR价格和库存，欢迎联系客服免费人工找货

描述 Description

The FM25V02 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A

ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a

RAM. It provides reliable data retention for 10 years while eliminating the complexities, overhead, and

system level reliability problems caused by Serial Flash and other nonvolatile memories.

特性 Features

256K bit Ferroelectric Nonvolatile RAM

Organized as 32,768 x 8 bits

High Endurance 100 Trillion (1014) Read/Writes

10 Year Data Retention

NoDelay™ Writes

Advanced High-Reliability Ferroelectric Process

Very Fast Serial Peripheral Interface - SPI

Up to 40 MHz Frequency

Direct Hardware Replacement for Serial Flash

SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)

Write Protection Scheme

Hardware Protection

Software Protection

Device ID

Device ID reads out Manufacturer ID & Part ID

Low Voltage, Low Power

Low Voltage Operation 2.0V – 3.6V

90 A Standby Current (typ.)

5 A Sleep Mode Current (typ.)

Industry Standard Configurations

Industrial Temperature -40 C to +85 C

8-pin “Green”/RoHS SOIC Package

8-pin “Green”/RoHS TDFN Package