FM25V01A-GTR集成电路（IC）的存储器规格书PDF中文资料

Functional Description

The FM25V01A is a 128-Kbit nonvolatile memory employing an advanced ferroelectric process. An F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories.

特性 Features

■ 128-Kbit ferroelectric random access memory (F-RAM) logically organized as 16K × 8

❐ High-endurance 100 trillion (1014) read/writes

❐ 151-year data retention (See the Data Retention and Endurance table)

❐ NoDelay™ writes

❐ Advanced high-reliability ferroelectric process

■ Very fast serial peripheral interface (SPI)

❐ Up to 40-MHz frequency

❐ Direct hardware replacement for serial flash and EEPROM

❐ Supports SPI mode 0 (0, 0) and mode 3 (1, 1)

■ Sophisticated write-protection scheme

❐ Hardware protection using the Write Protect (WP) pin

❐ Software protection using Write Disable instruction

❐ Software block protection for 1/4, 1/2, or entire array

■ Device ID

❐ Manufacturer ID and Product ID

■ Low power consumption

❐ 2.5-mA active current at 40 MHz

❐ 150-A standby current

❐ 8-A sleep mode current

■ Low-voltage operation: VDD = 2.0 V to 3.6 V

■ Industrial temperature: –40 C to +85 C

■ 8-pin small outline integrated circuit (SOIC) package

■ Restriction of hazardous substances (RoHS) compliant